參數(shù)資料
型號(hào)： IS45VS16160D-8BLA2
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
封裝： 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54
文件頁(yè)數(shù)： 59/61頁(yè)
文件大?。?/td> 939K
代理商： IS45VS16160D-8BLA2
Integrated Silicon Solution, Inc. — www.issi.com
7
Rev. 00A
04/21/09
IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
GENERAL DESCRIPTION
READ
TheREADcommandselectsthebankfromBA0,BA1inputs
and starts a burst read access to an active row. Inputs A0-
A9(x8);A0-A8(x16)providesthestartingcolumnlocation.
WhenA10isHIGH,thiscommandfunctionsasanAUTO
PRECHARGE command. When the auto precharge is
selected, the row being accessed will be precharged at
theendoftheREADburst.Therowwillremainopenfor
subsequentaccesseswhenAUTOPRECHARGEisnot
selected.DQ’sreaddataissubjecttothelogiclevelon
theDQMinputstwoclocksearlier.WhenagivenDQM
signalwasregisteredHIGH,thecorrespondingDQ’swill
be High-Z two clocks later. DQ’s will provide valid data
whentheDQMsignalwasregisteredLOW.
WRITE
A burst write access to an active row is initiated with the
WRITEcommand.BA0,BA1inputsselectsthebank,and
the starting column location is provided by inputs A0-A9
(x8);A0-A8(x16).WhetherornotAUTO-PRECHARGEis
used is determined by A10.
Therowbeingaccessedwillbeprechargedattheendof
theWRITEburst,ifAUTOPRECHARGEisselected.If
AUTOPRECHARGEisnotselected,therowwillremain
openforsubsequentaccesses.
A memory array is written with corresponding input data
onDQ’sandDQMinputlogiclevelappearingatthesame
time.DatawillbewrittentomemorywhenDQMsignalis
LOW.WhenDQMisHIGH,thecorrespondingdatainputs
willbeignored,andaWRITEwillnotbeexecutedtothat
byte/column location.
PRECHARGE
The PRECHARGE command is used to deactivate the
open row in a particular bank or the open row in all banks.
BA0,BA1canbeusedtoselectwhichbankisprecharged
or they are treated as “Don’t Care”. A10 determined
whetheroneorallbanksareprecharged.Afterexecut-
ing this command, the next command for the selected
bank(s)isexecutedafterpassageoftheperiodt
RP, which
istheperiodrequiredforbankprecharging.Onceabank
has been precharged, it is in the idle state and must be
activatedpriortoanyREADorWRITEcommandsbeing
issued to that bank.
AUTO PRECHARGE
TheAUTOPRECHARGEfunctionensuresthatthepre-
charge is initiated at the earliest valid stage within a burst.
Thisfunctionallowsforindividual-bankprechargewithout
requiringanexplicitcommand.A10toenabletheAUTO
PRECHARGEfunctioninconjunctionwithaspecificREAD
orWRITEcommand.ForeachindividualREADorWRITE
command, auto precharge is either enabled or disabled.
AUTOPRECHARGEdoesnotapplyexceptinfull-page
burst mode. Upon completion of the READ or WRITE
burst, a precharge of the bank/row that is addressed is
automatically performed.
AUTO REFRESH COMMAND
ThiscommandexecutestheAUTOREFRESHoperation.
Therowaddressandbanktoberefreshedareautomatically
generatedduringthisoperation. Thestipulatedperiod(trc)is
requiredforasinglerefreshoperation,andnoothercom-
mandscanbeexecutedduringthisperiod. Thiscommand
isexecutedatleast8192timesforeveryTref.Duringan
AUTOREFRESHcommand,addressbitsare“Don’tCare”.
ThiscommandcorrespondstoCBRAuto-refresh.
BURST TERMINATE
The BURSTTERMINATE command forcibly terminates
the burst read and write operations by truncating either
fixed-length or full-page bursts and the most recently
registeredREADorWRITEcommandpriortotheBURST
TERMINATE.
COMMAND INHIBIT
COMMANDINHIBITpreventsnewcommandsfrombeing
executed.Operationsinprogressarenotaffected,apart
fromwhethertheCLKsignalisenabled
NO OPERATION
WhenCSislow,theNOPcommandpreventsunwanted
commands from being registered during idle or wait
states.
LOAD MODE REGISTER
DuringtheLOADMODEREGISTERcommandthemode
registerisloadedfromA0-A12.Thiscommandcanonly
be issued when all banks are idle.
ACTIVE COMMAND
When the ACTIVE COMMAND is activated, BA0, BA1
inputs selects a bank to be accessed, and the address
inputsonA0-A12selectstherow.UntilaPRECHARGE
command is issued to the bank, the row remains open
for accesses.
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