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參數(shù)資料
| 型號： | IS45VS16160D-8BLA2 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| 封裝： | 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54 |
| 文件頁數(shù)： | 32/61頁 |
| 文件大?。?/td> | 939K |
| 代理商： | IS45VS16160D-8BLA2 |
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38
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
04/21/09
IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
CLK
CKE
HIGH
COLUMN ADDRESS
AUTO PRECHARGE
BANK ADDRESS
CS
RAS
CAS
WE
A0-A9
A10
BA0, BA1
NO PRECHARGE
A11,A12
WRITE COMMAND
Thestartingcolumnandbankaddressesareprovidedwith
theWRITEcommand,andautoprechargeiseitherenabled
or disabled for that access. If auto precharge is enabled,
the row being accessed is precharged at the completion of
theburst.ForthegenericWRITEcommandsusedinthe
following illustrations, auto precharge is disabled.
DuringWRITEbursts,thefirstvaliddata-in element will be
registered coincident withtheWRITEcommand.Subsequent
data elements will be registered on each successive posi-
tiveclockedge.Uponcompletionofafixed-lengthburst,
assuming no other commands have been initiated, the
DQswillremainHigh-Zandanyadditionalinputdatawill
beignored(seeWRITEBurst).Afull-pageburstwillcon-
tinue until terminated. (At the end of the page, it will wrap
tocolumn0andcontinue.)
DataforanyWRITEburstmaybetruncatedwithasubse-
quentWRITEcommand,anddataforafixed-lengthWRITE
burst may be immediately followed by data for a WRITE
command.ThenewWRITEcommandcanbeissuedon
anyclockfollowingthepreviousWRITEcommand,andthe
data provided coincident with the new command applies to
the new command.
AnexampleisshowninWRITEtoWRITEdiagram.Data
n + 1 is either the last of a burst of two or the last desired
ofalongerburst.The256MbSDRAMusesapipelined
architectureandthereforedoesnotrequirethe2n rule as-
sociatedwithaprefetcharchitecture.AWRITEcommand
can be initiated on any clock cycle following a previous
WRITEcommand.Full-speedrandomwriteaccesseswithin
a page can be performed to the same bank, as shown in
RandomWRITECycles,oreachsubsequentWRITEmay
be performed to a different bank.
DataforanyWRITEburstmaybetruncatedwithasubse-
quentREADcommand,anddataforafixed-lengthWRITE
burstmaybeimmediatelyfollowedbyasubsequentREAD
command.OncetheREADcommandisregistered,the
datainputswillbeignored,andWRITEswillnotbeex-
ecuted.AnexampleisshowninWRITEtoREAD.Datan
+ 1 is either the last of a burst of two or the last desired
of a longer burst.
Data for a fixed-length WRITE burst may be followed
by,ortruncatedwith,aPRECHARGEcommandtothe
same bank (provided that auto precharge was not acti-
vated), and a full-pageWRITE burst may be truncated
withaPRECHARGEcommandtothesamebank.The
PRECHARGEcommandshouldbeissuedtdpl after the
clock edge at which the last desired input data element
isregistered.Theautoprechargemoderequiresatdpl of
atleastoneclockplustime,regardlessoffrequency.In
addition,whentruncatingaWRITEburst,theDQMsignal
must be used to mask input data for the clock edge prior
to,andtheclockedgecoincidentwith,thePRECHARGE
command.AnexampleisshownintheWRITEtoPRE-
CHARGEdiagram.Datan+1 is either the last of a burst
oftwoorthelastdesiredofalongerburst.Followingthe
PRECHARGEcommand,asubsequentcommandtothe
same bank cannot be issued until trp is met.
Inthecaseofafixed-lengthburstbeingexecutedtocomple-
tion, a PRECHARGE command issued at the optimum
time (asdescribedabove) provides the same operation that
wouldresultfromthesamefixed-lengthburstwithauto
precharge.ThedisadvantageofthePRECHARGE command
isthatitrequiresthatthecommandandaddressbusesbe
availableattheappropriatetimetoissuethecommand;the
advantageofthePRECHARGEcommandisthatitcanbe
usedtotruncatefixed-lengthorfull-pagebursts.
Fixed-lengthorfull-pageWRITEburstscanbetruncated
withtheBURSTTERMINATEcommand.Whentruncat-
ingaWRITEburst,theinputdataappliedcoincidentwith
theBURSTTERMINATEcommandwillbeignored.The
lastdatawritten(providedthatDQMisLOWatthattime)
will be the input data applied one clock previous to the
BURSTTERMINATEcommand.ThisisshowninWRITE
BurstTermination,wheredatan is the last desired data
element of a longer burst.
WRITES
WRITEburstsareinitiatedwithaWRITEcommand,as
showninWRITECommanddiagram.
Note:A9is"Don'tCare"forx16.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IS4600 | 制造商:Isocom Components 功能描述:. |
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| IS46DR16128-3DBLA1 | 功能描述:動態(tài)隨機存取存儲器 Automotive 2G,1.8V DDR2,128Mx16,333Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS46DR16128-3DBLA1-TR | 功能描述:動態(tài)隨機存取存儲器 Automotive,2G,1.8V DDR2,128Mx16,333Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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