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參數資料
| 型號： | IS43R32800B-5BL |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 8M X 32 DDR DRAM, 0.7 ns, PBGA144 |
| 封裝： | 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MINI, FBGA-144 |
| 文件頁數： | 1/39頁 |
| 文件大?。?/td> | 507K |
| 代理商： | IS43R32800B-5BL |
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Integrated Silicon Solution, Inc. — www.issi.com
1
Rev. 00D
03/19/08
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
IS43R32800B
8Mx32
256Mb DDR Synchronous DRAM
PRELIMINARY INFORMATION
MAY 2008
DESCRIPTION:
IS43R32800B is a 4-bank x 2,097,152-word x32bit
Double Data Rate Synchronous DRAM, with SSTL_2
interface. All control and address signals are referenced
to the rising edge of CLK. Input data is registered on
both edges of data strobe, and output data and data
strobe are referenced on both edges of CLK. The
IS43R32800B achieves very high speed clock rate up to
200 MHz. It is packaged in 144-ball FBGA.
FEATURES
V
dd/Vddq=2.5V+0.2V (-5, -6, -75)
Double data rate architecture; two data transfers
per clock cycle
Bidirectional, data strobe (DQS) is transmitted/
received with data
Differential clock input (CLK and /CLK)
DLL aligns DQ and DQS transitions with CLK
transitions edges of DQS
Commands entered on each positive CLK edge;
Data and data mask referenced to both edges of
DQS
4 bank operation controlled by BA0, BA1 (Bank
Address)
/CAS latency –2.0/2.5/3.0 (programmable)
Burst length - 2/4/8 (programmable)
Burst type - Sequential/ Interleave (program-
mable)
Auto precharge / All bank precharge controlled
by A8
4096 refresh cycles/ 64ms (4 banks concurrent
refresh)
Auto refresh and Self refresh
Row address A0-11/ Column address A0-7, A9-
SSTL_2 Interface
Package 144-ball FBGA
Available in Industrial Temperature
Temperature Range:
Commercial (0oC to +70oC)
Industrial (-40oC to +85oC)
ADDRESS TABLE
Parameter
8M x 32
Configuration
2M x 32 x 4 banks
Bank Address Pins
BA0, BA1
Autoprecharge Pins
A8/AP
Row Addresses
A0 – A11
Column Addresses
A0 – A7, A9
Refresh Count
4096 / 64ms
KEY TIMING PARAMETERS
Parameter
-5
-6
-75
Unit
Clk Cycle Time
CAS Latency = 3
5
6
7.5
ns
CAS Latency = 2.5
5
6
7.5
ns
CAS Latency = 2
7.5
ns
Clk Frequency
CAS Latency = 3
200
167
143 MHz
CAS Latency = 2.5
200
167
143 MHz
CAS Latency = 2
143
143 MHz
Access Time from Clock
CAS Latency = 3
+0.70 +0.70 +0.70 ns
CAS Latency = 2.5 +0.70 +0.70 +0.70 ns
CAS Latency = 2
+0.75 +0.75 +0.70 ns
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS43R32800B-5BLI | 功能描述:動態(tài)隨機存取存儲器 256Mb (16M x 16) DDR, 2.5v, 200MHz RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R32800B-5BLI-TR | 功能描述:動態(tài)隨機存取存儲器 256Mb (16M x 16) DDR, 2.5v, 200MHz RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R32800B-5BL-TR | 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R32800B-5B-TR | 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 400MHz Commercial Temp RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R32800B-6B | 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 333MHz Commercial Temp RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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