參數(shù)資料
型號(hào): HN29V102414T-50H
英文描述: Flash Application Design Guidelines Others
中文描述: Flash應(yīng)用程序設(shè)計(jì)指南其他
文件頁數(shù): 44/46頁
文件大?。?/td> 338K
代理商: HN29V102414T-50H
HN29V102414 Series
44
Memory Structure
3
sector
2,112 bytes (16,896 bits)
byte (8 bits)
bit
Bit: Minimum unit of data.
Byte: Input/output data unit in programming and reading. (1 byte = 8 bits)
Sector: Page unit in erase, programming and reading. (1 sector = 2,112 bytes = 16,896 bits)
Device: 1 device = 32,768 sectors.
相關(guān)PDF資料
PDF描述
HN29V1G91T-35 Flash Application Design Guidelines Others
HN29V51211T-50H Flash Application Design Guidelines Others
HN29VB800R-10 x8/x16 Flash EEPROM
HN29VB800R-12 x8/x16 Flash EEPROM
HN29VB800SERIES x8/x16 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN29V1G91T-30 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:128M X 8-bit AG-AND Flash Memory
HN29V1G91T-35 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Application Design Guidelines Others
HN29V25611A 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
HN29V25611AT-50 制造商:Renesas Electronics Corporation 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8 50NS 48TSOP-I - Trays
HN29V25611AT-50H 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)