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參數(shù)資料
| 型號： | HN29V102414T-50H |
| 英文描述： | Flash Application Design Guidelines Others |
| 中文描述： | Flash應用程序設計指南其他 |
| 文件頁數(shù)： | 43/46頁 |
| 文件大?。?/td> | 338K |
| 代理商： | HN29V102414T-50H |
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HN29V102414 Series
43
For Errors in program or erase operations
The device may fail during a program or erase operation. Failure mode can be confirmed by read out the
status register after complete the erase and program operations. There are two failure modes specified by
each codes:
1: Status register error flag: I/O6 = V
OL
Replace sector under the “Spare Sectors Replacement Flow at Status Register I/O6 Read”. Replacement must
be applied to one sector(2k bytes) which contains failure bits.
2: Status register error flag: I/O6 = V
OH
Escape the program data temporary under the “Replacement Flow at Status Register I/O6 Read”. If failure
data can be corrected by ECC, do not replace to spare sector. If failure data can not be corrected by ECC,
replace to spare sector. Replacement must be applied to one sector(2k bytes) which contains failure bits.
Program start
Program end
Sector Replacement
Sector Replacement
Program end
Program end
Check RDY/
Busy
Set an usable sector
Yes
Yes
Yes
No
No
Check status
Yes
No
Check status
Check status
Check ECC
Check I/O6
START
END
Escape program deta*
1
Read error sector
V
OL
V
OH
Note: 1. Refer to 'Spare sector replacement flow after program error' to escape the deta.
Check status: Status register read
Check I/O6: I/O6 output monitor
Check ECC: Correct by ECC
No
Spare Sectors Replacement Flow at Status Register I/O6 Read
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|---|---|
| HN29V1G91T-35 | Flash Application Design Guidelines Others |
| HN29V51211T-50H | Flash Application Design Guidelines Others |
| HN29VB800R-10 | x8/x16 Flash EEPROM |
| HN29VB800R-12 | x8/x16 Flash EEPROM |
| HN29VB800SERIES | x8/x16 Flash EEPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HN29V1G91T-30 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:128M X 8-bit AG-AND Flash Memory |
| HN29V1G91T-35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Application Design Guidelines Others |
| HN29V25611A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29V25611AT-50 | 制造商:Renesas Electronics Corporation 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8 50NS 48TSOP-I - Trays |
| HN29V25611AT-50H | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
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