參數(shù)資料
型號: HN29V102414T-50H
英文描述: Flash Application Design Guidelines Others
中文描述: Flash應(yīng)用程序設(shè)計指南其他
文件頁數(shù): 2/46頁
文件大小: 338K
代理商: HN29V102414T-50H
HN29V102414 Series
2
Erase mode
Single sector erase ((2048 + 64) byte unit)
Fast serial read access time:
First access time: 50 μs (max)
Serial access time: 50 ns (max)
Low power dissipation:
I
CC1
= 2 mA (typ) (Read) (1-chip operation)
I
CC1
= 4 mA (typ) (Read) (2-chip operation)
I
CC2
= 20 mA (max) (Read) (1-chip operation)
I
CC2
= 40 mA (max) (Read) (2-chip operation)
I
SB2
= 50 μA (max) (Standby) (1-chip operation)
I
SB2
= 100 μA (max) (Standby) (2-chip operation)
I
CC3
/I
CC4
= 40 mA (max) (Erase/Program) (1-chip operation)
I
CC3
/I
CC4
= 80 mA (max) (Erase/Program) (2-chip operation)
I
SB3
= 20 μA (max) (Deep standby) (1-chip operation)
I
SB3
= 40 μA (max) (Deep standby) (2-chip operation)
The following architecture is required for data reliability.
Error correction: more than 3-bit error correction per each sector read
Spare sectors: 1.8% (579 sectors)/chip (min) within usable sectors
Ordering Information
Type No.
Available sector
Package
HN29V102414T-50
More than 64,226 sectors
12.0
×
18.40 mm
2
0.5 mm pitch
48-pin plastic TSOP I (TFP-48DA)
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