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參數資料
| 型號： | HN29V102414T-50H |
| 英文描述： | Flash Application Design Guidelines Others |
| 中文描述： | Flash應用程序設計指南其他 |
| 文件頁數： | 41/46頁 |
| 文件大小： | 338K |
| 代理商： | HN29V102414T-50H |
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HN29V102414 Series
41
Requirements for High System Reliability
The device may fail during a program, erase or read operation due to write or erase cycles. The following
architecture will enable high system reliability if a failure occurs.
1. For an error in read operation: An ECC (Error Correction Code) or a similar function which can correct
3-bits per each sectors is required for data reliability. When error occurs, data must not be corrected by
replacing to spare sector.
2. For errors in program or erase operations: The device may fail during a program or erase operation due to
write or erase cycles. The status register indicates if the erase and program operation complete in a finite
time. When an error occured in the sector, try to reprogram the data into another sector. Avoid further
system access to the sector that error happens. Typically, recommended number of a spare sectors are
1.8% (579 sectors/chip (min)) of initial usable 32,113 sectors/chip (min.) by each device. For the
reprogramming, do not use the data from the failed sectors, because the data from the failed sectors are not
fixed. So the reprogram data must be the data reloaded from the external buffer, or use the Data recovery
read mode or the Data recovery write mode (see the “Mode Description” and under figure “Spare Sector
Replacement Flow after Program Error”). To avoid consecutive sector failures, choose addresses of spare
sectors as far as possible from the failed sectors. In this case, 10
5
cycles of program/erase endurance is
guaranteed.
相關PDF資料 |
PDF描述 |
|---|---|
| HN29V1G91T-35 | Flash Application Design Guidelines Others |
| HN29V51211T-50H | Flash Application Design Guidelines Others |
| HN29VB800R-10 | x8/x16 Flash EEPROM |
| HN29VB800R-12 | x8/x16 Flash EEPROM |
| HN29VB800SERIES | x8/x16 Flash EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HN29V1G91T-30 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:128M X 8-bit AG-AND Flash Memory |
| HN29V1G91T-35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Application Design Guidelines Others |
| HN29V25611A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29V25611AT-50 | 制造商:Renesas Electronics Corporation 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8 50NS 48TSOP-I - Trays |
| HN29V25611AT-50H | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
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