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參數(shù)資料
| 型號： | HN29V102414T-50H |
| 英文描述： | Flash Application Design Guidelines Others |
| 中文描述： | Flash應(yīng)用程序設(shè)計指南其他 |
| 文件頁數(shù)： | 12/46頁 |
| 文件大小： | 338K |
| 代理商： | HN29V102414T-50H |
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HN29V102414 Series
12
Program (4):
Program data PD0 to PD2111 is programmed into the sector of address SA automatically by
internal control circuits. When CA is input, program data PD (m) to PD (m + j) is programmed from CA into
the sector of address SA automatically by internal control circuits. By using program (4), data can be
rewritten for each sector before the following erase. So the column data before programming operation are
either "1" or "0". In this mode, E/W number of times must be counted whenever program (4) execute. After
the programming starts, the program completion can be checked through the RDY/
Busy
signal and status data
polling. The sector valid data should be included in the program data PD2048 to PD2111.
Memory array
32767
Sector
address
0
0
2111
Register
Serial read (1) (Without CA)
Program (1) (Without CA)
Program (2)
32767
Sector
address
0
0
2111
Register
Serial read (2)
Program (3)
2048
Memory array
32767
Sector
address
0
0
2111
Register
Serial read (1) (With CA)
Program (1) (With CA)
Column address
Memory array
Status Register Read
The status returns to the status register read mode from standby mode, when
CE
and
OE
is V
IL
. In the status
register read mode, I/O pins output the same operation status as in the status data polling defined in the
function description.
Identifier Read
The manufacturer and device identifier code can be read in the identifier read mode. The manufacturer and
device identifier code is selected with
CDE
V
IL
and V
IH
, respectively.
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| HN29V1G91T-35 | Flash Application Design Guidelines Others |
| HN29V51211T-50H | Flash Application Design Guidelines Others |
| HN29VB800R-10 | x8/x16 Flash EEPROM |
| HN29VB800R-12 | x8/x16 Flash EEPROM |
| HN29VB800SERIES | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29V1G91T-30 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:128M X 8-bit AG-AND Flash Memory |
| HN29V1G91T-35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Application Design Guidelines Others |
| HN29V25611A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29V25611AT-50 | 制造商:Renesas Electronics Corporation 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8 50NS 48TSOP-I - Trays |
| HN29V25611AT-50H | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
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