參數(shù)資料
型號: HN29V102414T-50H
英文描述: Flash Application Design Guidelines Others
中文描述: Flash應用程序設計指南其他
文件頁數(shù): 19/46頁
文件大?。?/td> 338K
代理商: HN29V102414T-50H
HN29V102414 Series
19
DC Characteristics
(V
CC
= 2.7 V to 3.6 V, Ta = 0 to +70C)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input leakage current
I
LI
I
LO
I
SB1
2
μA
Vin = V
SS
to V
CC
Vout = V
SS
to V
CC
CE
= V
IH
Output leakage current
2
μA
Standby V
current
(1-chip operation)
0.3
1
mA
(2-chip operation)
I
SB1
I
SB2
0.6
2
mA
(1-chip operation)
30
50
μA
CE
= V
CC
± 0.2 V,
RES
= V
CC
± 0.2 V
(2-chip operation)
I
SB2
I
SB3
60
100
μA
Deep standby V
current
(1-chip operation)
1
20
μA
RES
= V
SS
± 0.2 V
(2-chip operation)
I
SB3
I
CC1
2
40
μA
Operating V
current
(1-chip operation)
2
20
mA
Iout = 0 mA, f = 0.2 MHz
(2-chip operation)
I
CC1
I
CC2
I
CC2
I
CC3
4
40
mA
(1-chip operation)
10
20
mA
Iout = 0 mA, f = 20 MHz
(2-chip operation)
20
40
mA
Operating V
current (Program)
(1-chip operation)
20
40
mA
In programming
(2-chip operation)
I
CC3
I
CC4
40
80
mA
Operating V
current (Erase)
(1-chip operation)
20
40
mA
In erase
(2-chip operation)
I
CC4
V
IL
V
IH
V
ILR
V
IHR
40
80
mA
Input voltage
–0.3*
1, 2
0.8
V
2.0
V
CC
+ 0.3*
3
V
0.2
Input voltage (
RES
pin)
–0.2
V
V
CC
0.2
V
CC
+ 0.2
V
Output voltage
V
OL
V
OH
0.4
V
I
OL
= 2 mA
I
OH
= –2 mA
2.4
V
Notes: 1. V
min = –1.0 V for pulse width
50 ns in the read operation. V
IL
min = –2.0 V for pulse width
20
ns in the read operation.
2. V
IL
min = –0.6 V for pulse width
20 ns in the erase/data programming operation.
3. V
max = V
+ 1.5 V for pulse width
20 ns. If V
IH
is over the specified maximum value, the
operations are not guaranteed.
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