參數(shù)資料
型號: HB52E169EN
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內(nèi)存(64MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 51/64頁
文件大?。?/td> 2741K
代理商: HB52E169EN
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
51
Bank active to bank active for different bank
Mode register set to Bank-active command interval:
The interval between setting the mode register and
executing a bank-active command must be no less than l
RSA
.
DQMB Control
The DQMB mask the DQ data. The timing of DQMB is different during reading and writing.
Reading:
When data is read, the output buffer can be controlled by DQMB. By setting DQMB to Low, the
output buffer becomes Low-Z, enabling data output. By setting DQMB to High, the output buffer becomes
High-Z, and the corresponding data is not output. However, internal reading operations continue. The laten-
cy of DQMB during reading is 2 clocks.
Writing:
Input data can be masked by DQMB. By setting DQMB to Low, data can be written. In addition,
when DQMB is set to High, the corresponding data is not written, and the previous data is held. The latency
of DQMB during writing is 0 clock.
CK
Command
Address
BA
Bank 0
Active
Bank 3
Active
ACTV
ROW:0
ACTV
ROW:1
t
RRD
CK
Command
Address
Mode
Register Set
Bank
Active
MRS
ACTV
I
RSA
BS & ROW
CODE
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