參數(shù)資料
型號(hào): HB52E169EN
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無(wú)緩沖SDRAM的內(nèi)存(64MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 46/64頁(yè)
文件大?。?/td> 2741K
代理商: HB52E169EN
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
46
2. Same bank:
The consecutive read command (the same bank) is illegal.
Write with auto precharge to Write command interval
1. Different bank:
When some banks are in the active state, the second write command (another bank) is
executed. In the case of burst writes, the second write command has priority. The internal auto-precharge of
one bank starts at the next clock of the second command .
Write with Auto Precharge to Write Command Interval
(Different bank)
2. Same bank:
The consecutive write command (the same bank) is illegal.
Read with auto precharge to Write command interval
Different bank:
When some banks are in the active state, the second write command (another bank) is exe-
cuted. However, DQMB must be set High so that the output buffer becomes High-Z before data input. The
internal auto-precharge of one bank starts at the next clock of the second command.
Read with Auto Precharge to Write Command Interval
(Different bank)
CK
Command
BA
Dout
READ A
READ
out A0
out A1
out B0
out B1
CE
Latency = 3
Burst Length = 4
bank0
Read A
bank3
Read
Note: Internal auto-precharge starts at the timing indicated by " ".
CK
Command
BA
Din
WRIT A
WRIT
in B1
in B2
in B3
in A0
in A1
in B0
Burst Length = 4
bank0
Write A
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
相關(guān)PDF資料
PDF描述
HB52E88EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E89EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E169E12 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
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參數(shù)描述
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