參數(shù)資料
型號(hào): HB52E169EN
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無(wú)緩沖SDRAM的內(nèi)存(64MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 49/64頁(yè)
文件大小: 2741K
代理商: HB52E169EN
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
49
CE Latency = 3, Burst Length = 1, 2, 4, 8, full page burst
Write command to Precharge command interval (same bank):
When the precharge command is executed
for the same bank as the write command that preceded it, the minimum interval between the two commands
is 1 clock.
However, if the burst write operation is unfinished, the input data must be masked by means of
DQMB for assurance of the clock defined by t
DPL
.
WRITE to PRECHARGE Command Interval (same bank):
Burst Length = 4 (To stop write operation)
CK
Command
Dout
READ
PRE/PALL
out A0
High-Z
l
HZP
= 3
CK
Command
Din
WRIT
PRE/PALL
t
DPL
DQMB
CK
in A0
in A1
Command
Din
WRIT
PRE/PALL
DQMB
t
DPL
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