參數(shù)資料
型號(hào)： HB52E169EN
廠商： Hitachi,Ltd.
英文描述： 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述： 64 MB的無(wú)緩沖SDRAM的內(nèi)存（64MB的未緩沖同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 29/64頁(yè)
文件大小： 2741K
代理商： HB52E169EN
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
29
ACTIVE clock suspend:
This suspend mode ignores inputs after the next clock by internally maintaining
the bank active status.
READ suspend and READ with Auto-precharge suspend:
The data being output is held (and continues
to be output).
WRITE suspend and WRIT with Auto-precharge suspend:
In this mode, external signals are not accept-
ed. However, the internal state is held.
Clock suspend:
During clock suspend mode, keep the CKE to Low.
Clock suspend mode exit:
The SDRAM module exits from clock suspend mode by setting CKE to High
during the clock suspend state.
IDLE:
In this state, all banks are not selected, and completed precharge operation.
Auto-refresh command [REF]:
When this command is input from the IDLE state, the SDRAM module
starts auto-refresh operation. (The auto-refresh is the same as the CBR refresh of conventional DRAMs.)
During the auto-refresh operation, refresh address and bank select address are generated inside the SDRAM
module. For every auto-refresh cycle, the internal address counter is updated. Accordingly, 4096 times are
required to refresh the entire memory. Before executing the auto-refresh command, all the banks must be in
the IDLE state. In addition, since the precharge for all banks is automatically performed after auto-refresh,
no precharge command is required after auto-refresh.
Self-refresh entry [SELF]:
When this command is input during the IDLE state, the SDRAM module starts
self-refresh operation. After the execution of this command, self-refresh continues while CKE is Low. Since
self-refresh is performed internally and automatically, external refresh operations are unnecessary.
Power down mode entry:
When this command is executed during the IDLE state, the SDRAM module en-
ters power down mode. In power down mode, power consumption is suppressed by cutting off the initial in-
put circuit.
Self-refresh exit:
When this command is executed during self-refresh mode, the SDRAM module can exit
from self-refresh mode. After exiting from self-refresh mode, the SDRAM module enters the IDLE state.
Power down exit:
When this command is executed at the power down mode, the SDRAM module can exit
from power down mode. After exiting from power down mode, the SDRAM module enters the IDLE state.
Function Truth Table
The following table shows the operations that are performed when each command is issued in each mode of
the SDRAM module. The following table assumes that CKE is high.
Current state
Precharge
S
H
L
L
L
L
L
L
L
L
RE
×
H
H
H
H
L
L
L
L
CE
×
H
H
L
L
H
H
L
L
W
×
H
L
H
L
H
L
H
L
Address
×
×
×
BA, CA, A10 READ/READ A
BA, CA, A10 WRIT/WRIT A
BA, RA
ACTV
BA, A10
PRE, PALL
×
REF, SELF
MODE
MRS
Command
DESL
NOP
BST
Operation
Enter IDLE after t
RP
Enter IDLE after t
RP
NOP
ILLEGAL*
4
ILLEGAL*
4
ILLEGAL*
4
NOP*
6
ILLEGAL
ILLEGAL
相關(guān)PDF資料
PDF描述
HB52E88EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E89EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E169E12 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52E169EN-B6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52E328EM-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
HB52E328EM-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
HB52E329EM-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
HB52E329EM-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*