參數(shù)資料
型號(hào)： HB52E169EN
廠商： Hitachi,Ltd.
英文描述： 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述： 64 MB的無(wú)緩沖SDRAM的內(nèi)存（64MB的未緩沖同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 41/64頁(yè)
文件大?。?/td> 2741K
代理商： HB52E169EN
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
41
CE Latency = 3, Burst Length = full page
Burst stop command at burst write:
The burst stop command (BST command) is used to stop data input
during a full-page burst write. No data is written in the same clock as the BST command, and in subsequent
clocks. In addition, the BST command is only valid during full-page burst mode, and is illegal with burst
lengths of 1, 2, 4 and 8. And an interval of t
DPL
is required between last data-in and the next precharge com-
mand.
Burst Length = full page
Command Intervals
Read command to Read command interval:
1. Same bank, same ROW address:
When another read command is executed at the same ROW address
of the same bank as the preceding read command execution, the second read can be performed after an inter-
val of no less than 1 clock. Even when the first command is a burst read that is not yet finished, the data read
by the second command will be valid.
lBSR
clocks
CK
Command
Dout
out
out
out
out
lBSH
clocks
BST
out
out
out
t
CK
Command
Din
in
DPL
in
PRE/PALL
BST
I BSW
相關(guān)PDF資料
PDF描述
HB52E88EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E89EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E169E12 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52E169EN-B6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52E328EM-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
HB52E328EM-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
HB52E329EM-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
HB52E329EM-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
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