參數(shù)資料
型號(hào): HB52E169EN
廠(chǎng)商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無(wú)緩沖SDRAM的內(nèi)存(64MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 40/64頁(yè)
文件大?。?/td> 2741K
代理商: HB52E169EN
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
40
Single Write
Full-page Burst Stop
Burst stop command during burst read:
The burst stop (BST) command is used to stop data output during
a full-page burst. The BST command sets the output buffer to High-Z and stops the full-page burst read. The
timing from command input to the last data changes depending on the CE latency setting. In addition, the
BST command is valid only during full-page burst mode, and is illegal with burst lengths 1, 2, 4 and 8.
CE Latency = 2, Burst Length = full page
CE latency
2
3
BST to valid data
1
2
BST to high impedance
2
3
CK
Command
Din
l
APW
I
RAS
ACTV
WRIT A
in
ACTV
Note: Internal auto-precharge starts at the timing indicated by " ".
and an interval of t
RAS
(l
RAS
) is required between previous active (ACTV) command
and internal precharge " ".
l = 1 cycle
CK
Command
Dout
out
out
out
out
l = 2 cycle
BST
out
out
相關(guān)PDF資料
PDF描述
HB52E88EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E89EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E169E12 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52E169EN-B6 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x72 SDRAM Module
HB52E328EM-A6B 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
HB52E328EM-B6B 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
HB52E329EM-A6B 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
HB52E329EM-B6B 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM