參數(shù)資料
型號(hào): HB52E169EN
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內(nèi)存(64MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 18/64頁
文件大?。?/td> 2741K
代理商: HB52E169EN
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
18
DC Characteristics (Ta = 0 to 65
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
(HB52E88EM)
2.4
2
1.8
1.65
1.5
1.4
1
0
–34
–59
–67
–73
–78
–81
–89
–93
–154
–197
–227
–248
–270
–285
–345
–503
Parameter
Operating current
(CE latency = 2)
(CE latency = 3)
Standby current in power down I
CC2P
Standby current in power down
(input signal stable)
Standby current in non power
down
Active standby current in power
down
Symbol
HB52E88EM
-A6F/B6F
Min
Unit
Test conditions
Burst length = 1
t
RC
= min
Notes
1, 2, 3
Max
I
CC1
I
CC1
560
560
24
16
mA
mA
mA
mA
CKE = V
IL
, t
CK
= 12 ns
CKE = V
IL
, t
CK
=
6
7
I
CC2PS
I
CC2N
128
mA
CKE, S = V
IH
,
t
CK
= 12 ns
CKE = V
IL
, t
CK
= 12 ns
4
I
CC3P
32
mA
1, 2, 6
I
OH
Min (mA)
I
OH
Max (mA)
Vout (V)
I
O
Vout (V)
0
–100
–200
–300
–500
–600
–400
0.5
1
1.5
2
2.5
3
min
max
3.5
0
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