參數(shù)資料
型號(hào): GT28F320D18B120
英文描述: x16 Flash EEPROM
中文描述: x16閃存EEPROM
文件頁(yè)數(shù): 9/83頁(yè)
文件大?。?/td> 836K
代理商: GT28F320D18B120
28F320D18
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5
2.3.1
Dual Physical Partitions
The device has an 8-Mb partition (8 parameter blocks plus 15 main blocks) and a 24-Mb partition
(48 main blocks).
Only one partition at a time is allowed to be in program or erase mode. It is also not possible to do
burst reads that cross partition boundaries.
Table 2 on page 9
summarizes simultaneous commands
allowed with dual partitions. For a detailed description of commands allowed using dual partitions
see
Table 11 on page 38
.
2.3.2
Parameter Blocks
The memory architecture includes parameter blocks that allow storage of frequently updated small
parameters that would normally be stored in EEPROM. By using software techniques, the word-
rewrite functionality of EEPROMs can be emulated. The device contains eight 4-Kword (4,096-
words) parameter blocks within the parameter partition.
2.3.3
Main Blocks
The remainder of the array is divided into equal-size 32-Kword main blocks that can store code
and/or data. See
Figure 2, “32-Mbit Top Parameter Memory Map” on page 6
and
Figure 3, “32-
Mbit Bottom Parameter Memory Map” on page 7
.
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