參數(shù)資料
型號: GT28F320D18B120
英文描述: x16 Flash EEPROM
中文描述: x16閃存EEPROM
文件頁數(shù): 73/83頁
文件大小: 836K
代理商: GT28F320D18B120
28F320D18
Product Preview
69
A.2
Query Structure Overview
The Query command causes the flash component to display the Common Flash Interface (CFI)
Query structure or “database.” The structure sub-sections and address locations are summarized
below.
NOTES:
1. Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as a
function of device bus width and mode.
2.
BA = Block Address beginning location (i.e., 08000h is block 1’s beginning location when the block size is
32 Kword).
3. Offset 15 defines “P” which points to the
Primary Intel-Specific Extended Query
Table.
Table 14. Example of Query Structure Output
Word Addressing
Byte Addressing
Offset
Hex Code
Value
Offset
Hex Code
Value
A
max
–A
0
0010h
0011h
0012h
0013h
0014h
0015h
0016h
0017h
0018h
...
D
15
–D
0
A
7
–A
0
10h
11h
12h
13h
14h
15h
16h
17h
18h
...
D
7
–D
0
0051
0052
0059
P_ID
LO
P_ID
HI
P
LO
P
HI
A_ID
LO
A_ID
HI
...
“Q”
“R”
“Y”
51
52
59
“Q”
“R”
“Y”
PrVendor
ID #
PrVendor
TblAdr
AltVendor
ID #
...
P_ID
LO
P_ID
LO
P_ID
HI
...
PrVendor
ID #
ID #
...
Table 15. Query Structure
(1)
Offset
Sub-Section Name
Description
00h
Manufacturer Code
01h
Device Code
(BA+2)h
(2)
Block Status Register
Block-Specific Information
04-0Fh
Reserved
Reserved for Vendor-Specific Information
10h
CFI Query Identification String
Command Set ID and Vendor Data Offset
1Bh
System Interface Information
Device Timing and Voltage Information
27h
Device Geometry Definition
Flash Device Layout
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