參數(shù)資料
型號(hào): GT28F320D18B120
英文描述: x16 Flash EEPROM
中文描述: x16閃存EEPROM
文件頁(yè)數(shù): 38/83頁(yè)
文件大?。?/td> 836K
代理商: GT28F320D18B120
28F320D18
34
Product Preview
7.1.1.5.2
V
CC
, V
PP
, RST# Transitions
The CUI latches commands as issued by
system software and is not altered by V
PP
or CE#
transitions or WSM actions. Its default state upon power-up, after exit from deep power-down
mode or after V
CC
transitions above V
LKO
(lockout voltage), is read array mode.
After any block erase or program operation is complete (even after V
PP
transitions down to
V
PPLK
), the CUI must be reset to read array mode via the Read Array command if access to the
flash memory array is desired.
PSU_CONF T
NOTE:
1. A resistor can be used if the V
supply can sink adequate current based on a resistor value. See
AP-657 Designing with the Advanced+ Boot Block Flash Memory Architecturefor details.
7.1.1.6
Power Supply Decoupling
Flash memory’s power switching characteristics require careful device de-coupling. System
designers should consider three supply current issues:
Standby current levels (I
CCS
)
Active current levels (I
CCR
)
Transient peaks produced by falling and rising edges of CE#.
Transient current magnitudes depend on the device outputs’ capacitive and inductive loading. Two-
line control and proper de-coupling capacitor selection will suppress these transient voltage peaks.
Each flash device should have a 0.1 μF ceramic capacitor connected between each V
CC
, V
CCQ
and
V
SSQ
, and between its V
PP
and V
SS
. These high-frequency, inherently low-inductance capacitors
should be placed as close as possible to the package leads.
Figure 13. Example Power Supply Configurations
V
CC
V
PP
12 V Fast Programming
Absolute Write Protection With V
PP
V
PPLK
System Supply
12 V Supply
10 K
V
CC
V
PP
System Supply
12 V Supply
Low Voltage and 12 V Fast Programming
V
CC
V
PP
System Supply
Prot#
(Logic Signal)
V
CC
V
PP
System Supply
Low-Voltage Programming
Low-Voltage Programming
Absolute Write Protection via Logic Signal
(Note 1)
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