DSP56366 Technical Data, Rev. 3.1
3-30
Freescale Semiconductor
174
CAS assertion to column address not valid
tCAH
5.25
× T
C 4.0
48.5
—
ns
175
RAS assertion to column address not valid
tAR
7.75
× T
C 4.0
73.5
—
ns
176
Column address valid to RAS deassertion
tRAL
6
× T
C 4.0
56.0
—
ns
177
WR deassertion to CAS assertion
tRCS
3.0
× T
C 4.0
26.0
—
ns
178
CAS deassertion to WR5 assertion
tRCH
1.75
× T
C 4.0
13.5
—
ns
179
RAS deassertion to WR
5 assertion
tRRH
0.25
× T
C 2.0
0.5
—
ns
180
CAS assertion to WR deassertion
tWCH
5
× T
C 4.2
45.8
—
ns
181
RAS assertion to WR deassertion
tWCR
7.5
× T
C 4.2
70.8
—
ns
182
WR assertion pulse width
tWP
11.5
× T
C 4.5
110.5
—
ns
183
WR assertion to RAS deassertion
tRWL
11.75
× T
C 4.3
113.2
—
ns
184
WR assertion to CAS deassertion
tCWL
10.25
× T
C 4.3
103.2
—
ns
185
Data valid to CAS assertion (write)
tDS
5.75
× T
C 4.0
53.5
—
ns
186
CAS assertion to data not valid (write)
tDH
5.25
× T
C 4.0
48.5
—
ns
187
RAS assertion to data not valid (write)
tDHR
7.75
× T
C 4.0
73.5
—
ns
188
WR assertion to CAS assertion
tWCS
6.5
× T
C 4.3
60.7
—
ns
189
CAS assertion to RAS assertion (refresh)
tCSR
1.5
× T
C 4.0
11.0
—
ns
190
RAS deassertion to CAS assertion (refresh)
tRPC
2.75
× T
C 4.0
23.5
—
ns
191
RD assertion to RAS deassertion
tROH
11.5
× T
C 4.0
111.0
—
ns
192
RD assertion to data valid
tGA
10
× T
C 7.0
—
93.0
ns
193
RD deassertion to data not valid
3tGZ
0.0
—
ns
194
WR assertion to data active
0.75
× T
C 0.3
7.2
—
ns
195
WR deassertion to data high impedance
0.25
× T
C
—2.5
ns
1 The number of wait states for out-of-page access is specified in the DCR.
2 The refresh period is specified in the DCR.
3 RD deassertion will always occur after CAS deassertion; therefore, the restricted timing is t
OFF and not tGZ.
4 The asynchronous delays specified in the expressions are valid for DSP56366.
5 Either t
RCH or tRRH must be satisfied for read cycles.
Table 3-15 DRAM Out-of-Page and Refresh Timings, Eleven Wait States1, 2 (continued)
No.
Characteristics3
Symbol
Expression4
Min
Max
Unit