
Preliminary 
 A48P3616   
      8M X 16 Bit DDR DRAM
Preliminary (September 2005, Version 0.0) 
4
AMIC Technology, Corp.
Input/Output Functional Description 
Symbol  
Type  
Function  
CK,
CK
Input 
Clock: 
CK and 
CK
  are differential clock inputs. All address and control input signals are 
sampled on the crossing of the positive edge of CK and negative edge of 
CK
 . Output 
(read) data is referenced to the crossings of CK and 
CK
  (both directions of crossing). 
CKE, CKE1, CKE1 
Input 
Clock Enable: 
CKE HIGH activates, and CKE Low deactivates, internal clock signals and 
device input buffers and output drivers. Taking CKE Low provides Precharge Power Down 
and Self Refresh operation (all banks idle), or Active Power Down (row Active in any bank). 
CKE is synchronous for power down entry and exit, and for self refresh entry. CKE is 
asynchronous for self refresh exit. CKE must be maintained high throughout read and write
accesses. Input buffers, excluding CK,
CK
  and CKE are disabled during Power Down. 
Input buffers, excluding CKE, are disabled during self refresh. The standard pinout includes 
one CKE pin. Optional pinouts might include CKE1 on a different pin, in addition to CKE0, 
to facilitate independent power down control of stacked devices. 
CS
, 
CS0
, 
CS1
Input 
Chip Select: 
All commands are masked when
CS
 is registered high.
CS
 provides for 
external bank selection on systems with multiple banks.
CS
 is considered part of the 
command code. The standard pinout includes one
CS
 pin. Optional pinouts might include 
CS1
 on a different pin, in addition to
CS0
, to allow upper or lower deck selection on 
stacked devices. 
RAS
 ,
CAS
,
WE
Input 
Command Inputs: 
RAS
 ,
CAS
 and
 WE
  (along with
CS
) define the command being 
entered. 
DM 
Input 
Input Data Mask: 
DM is an input mask signal for write data. Input data is masked when DM 
is sampled high coincident with that input data during a Write access. DM is sampled on 
both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and 
DQS loading. During a Read, DM can be driven high, low, or floated. 
BA0, BA1 
Input 
Bank Address Inputs: 
BA0 and BA1 define to which bank an Active, Read, Write or 
Precharge command is being applied. BA0 and BA1 also determines if the mode register or 
extended mode register is to be accessed during a MRS or EMRS cycle. 
Address Inputs: 
Provide the row address for Active commands, and the column address 
and Auto Precharge bit for Read/Write commands, to select one location out of the memory 
array in the respective bank. A10 is sampled during a Precharge command to determine 
whether the Precharge applies to one bank (A10 low) or all banks (A10 high). If only one 
bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also 
provide the op-code during a Mode Register Set command. 
A0 – A11 
Input 
DQ 
Input/Output
Data Input/Output: 
Data bus. 
DQS, LDQS, UDQS Input/Output
Data Strobe: 
Output with read data, input with write data. Edge-aligned with read data, 
centered in write data. Used to capture write data. For the x16, LDQS corresponds to the 
data on DQ0- DQ7; UDQS corresponds to the data on DQ8-DQ15 
NC 
No Connect: 
No internal electrical connection is present. 
NU 
Electrical connection is present. Should not be connected at second level of assembly. 
VDDQ 
Supply  
DQ Power Supply: 
2.5V 
±
 0.2V. 
VSSQ 
Supply
DQ Ground
VDD 
Supply
Power Supply: 
2.5V 
±
 0.2V. 
VSS 
Supply
Ground  
VREF 
Supply
SSTL_2 reference voltage: 
(V
DDQ
 / 2) 
±
 1%.