參數(shù)資料
型號: A48P3616
廠商: AMIC Technology Corporation
英文描述: CAP 270PF 50V CERAMIC MONO 5%
中文描述: 8米× 16位DDR內存
文件頁數(shù): 16/62頁
文件大?。?/td> 2214K
代理商: A48P3616
Preliminary
A48P3616
8M X 16 Bit DDR DRAM
Preliminary (September 2005, Version 0.0)
15
AMIC Technology, Corp.
Commands
Truth Tables 1a and 1b prvide a reference of the commands supported by DDR SDRAM device. A verbal description of each
commands follows.
Truth Table 1a: Commands
Name (Function)
CS
RAS
CAS
WE
Address
MNE
Note
Deselect (Nop)
H
X
X
X
X
NOP
1, 9
No Openration (Nop)
L
H
H
H
X
NOP
1, 9
Active (Select Bank And Activate Row)
L
L
H
H
Bank/Row
ACT
1, 3
Read (Select Bank And Activate Column, And Start Read Burst)
L
H
L
H
Bank/Col
Read
1, 4
Write (Select Bank And Activate Column, And Start Write Burst)
L
H
L
L
Bank/Col
Write
1, 4
Burst Terminate
L
H
H
L
X
BST
1, 8
Precharge (Deactivate Row In Bank Or Banks)
L
L
H
L
Code
PRE
1, 5
Auto Refresh Or Self Refresh (Enter Self Refresh Mode)
L
L
L
H
X
AR/SR
1, 6, 7
Mode Register Set
L
L
L
L
Op-Code
MRS
1, 2
Note:
1. CKE is high for all commands shown except Self Refresh.
2. BA0, BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0 = 1, BA1 = 0
selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A11 provide the op-code to be written to the
selected Mode Register.)
3. BA0-BA1 provide bank address and A0-A11 provide row address.
4. BA0, BA1 provide bank address; A0-A8
provide column address; A10 high enables the Auto Precharge feature
(non-persistent), A10 low disables the Auto Precharge feature.
5. A10 LOW: BA0, BA1 determine which bank is precharged.
A10 HIGH: all banks are precharged and BA0, BA1 are “Don’t Care.”
6. This command is auto refresh if CKE is high; Self Refresh if CKE is low.
7. Internal refresh counter controls row and bank addressing; all inputs and I/Os are “Don’t Care” except for CKE.
8. Applies only to read bursts with Auto Precharge disabled; this command is undefined (and should not be used) for read bursts
with Auto Precharge enabled or for write bursts
9. Deselect and NOP are functionally interchangeable.
Truth Table 1b: DM Operation
Name (Function)
Write Enable
DM
L
DQs
Valid
Note
1
Write Inhibit
H
X
1
Note: Used to mask write data; provided coincident with the corresponding data.
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