
Preliminary 
 A48P3616   
      8M X 16 Bit DDR DRAM
Preliminary (September 2005, Version 0.0) 
1
AMIC Technology, Corp.
Feature 
CAS Latency and Frequency  
Maximum Operating Frequency (MHz) 
DDR466 
(43) 
(5T) 
- 
- 
- 
166 
233 
200 
CAS 
Latency 
DDR400
DDR333 
(6K) 
133 
166 
- 
DDR266
(75B) 
100 
133 
- 
2 
2.5 
3 
 Double data rate architecture: two data transfers per clock 
cycle. 
 Bidirectional data strobe (DQS) is transmitted and received 
with data, to be used in capturing data at the receiver. 
 DQS is edge-aligned with data for reads and is center- 
aligned with data for writes. 
 Differential clock inputs (CK andCK ) 
 Four internal banks for concurrent operation 
 Data mask (DM) for write data. 
 DLL aligns DQ and DQS transitions with CK transitions. 
 Commands entered on each positive CK edge; data and 
data mask referenced to both edges of DQS. 
 Burst lengths: 2, 4, or 8 
 CAS Latency: 2 & 2.5 for 6K/75B, 2.5 & 3 for 5T, 3 for 43 
 Auto Precharge option for each burst access 
 Auto Refresh and Self Refresh Modes 
 15.6μs Maximum Average Periodic Refresh Interval 
 2.5V (SSTL_2 compatible) I/O 
 V
DD
 = V
DDQ
 = 2.5V 
±
 0.2V (6K/75B) 
 V
DD 
= V
DDQ
 = 2.6V 
±
 0.1V (5T/43) 
 Lead-free and Halogen-free product available
General Description 
The 128Mb DDR SDRAM is a high-speed CMOS, dynamic 
random-access memory containing 134,217,728 bits. It is 
internally configured as a quad-bank DRAM and is based on 
Nanya’s 110nm process. 
The 128Mb DDR SDRAM uses a double-data-rate 
architecture to achieve high-speed operation. The double 
data rate architecture is essentially a 2n prefetch architecture 
with an interface designed to transfer two data words per 
clock cycle at the I/O pins. A single read or write access for 
the 128Mb DDR SDRAM effectively consists of a single 2n-bit 
wide, one clock cycle data transfer at the internal DRAM core 
and two corresponding n-bit wide, one-half-clock-cycle data 
transfers at the I/O pins. 
A bidirectional data strobe (DQS) is transmitted externally, 
along with data, for use in data capture at the receiver. DQS 
is a strobe transmitted by the DDR SDRAM during Reads and 
by the memory controller during Writes. DQS is edgealigned 
with data for Reads and center-aligned with data for Writes. 
The 128Mb DDR SDRAM operates from a differential clock 
(CK and CK ; the crossing of CK going high and CK  going 
LOW is referred to as the positive edge of CK). Commands 
(address and control signals) are registered at every positive 
edge of CK. Input data is registered on both edges of DQS, 
and output data is referenced to both edges of DQS, as well 
as to both edges of CK.  
Read and write accesses to the DDR SDRAM are burst 
oriented; accesses start at a selected location and continue 
for a programmed number of locations in a programmed 
sequence.  
Accesses begin with the registration of an Active command, 
which is then followed by a Read or Write command. The 
address bits registered coincident with the Active command 
are used to select the bank and row to be accessed. The 
address bits registered coincident with the Read or Write 
command are used to select the bank and the starting column 
location for the burst access. 
The DDR SDRAM provides for programmable Read or Write 
burst lengths of 2, 4, or 8 locations. An Auto Precharge 
function may be enabled to provide a self-timed row 
precharge that is initiated at the end of the burst access. 
As with standard SDRAMs, the pipelined, multibank 
architecture of DDR SDRAMs allows for concurrent operation, 
thereby providing high effective bandwidth by hiding row 
precharge and activation time. 
An auto refresh mode is provided along with a power-saving 
Power Down mode. 
Prior to normal operation, the DDR SDRAM must be 
initialized. The following sections provide detailed information 
covering device initialization, register definition, command 
descriptions and device operation. 
The functionality described and the timing specifications 
included in this data sheet are for the DLL Enabled mode of 
operation.