參數(shù)資料
型號: 70T631S12DDGI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
封裝: 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144
文件頁數(shù): 7/27頁
文件大?。?/td> 220K
代理商: 70T631S12DDGI
15
IDT70T633/1S
High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
5670 drw 09
A0
A18
tAAS
tARF
(1)
Timing Waveform of Address Inputs for RapidWrite Mode Write Cycle
AC Electrical Characteristics over the Operating Temperature Range
and Supply Voltage Range for RapidWrite Mode Write Cycle(1)
NOTE:
1. Timing applies to all speed grades when utilizing the RapidWrite Mode Write Cycle.
NOTE:
1. A17 for IDT70T631.
Symbol
Parameter
Min
Max
Unit
tAAS
Allowable Address Skew for RapidWrite Mode
____
1ns
tARF
Address Rise/Fall Time for RapidWrite Mode
1.5
____
V/ns
5670 tbl 14
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