參數(shù)資料
型號： 70T631S12DDGI
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
封裝： 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144
文件頁數(shù)： 26/27頁
文件大?。?/td> 220K
代理商： 70T631S12DDGI
IDT70T633/1S
High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
8
RecommendedOperating
Temperature and Supply Voltage(1)
Recommended DC Operating
Conditions with VDDQ at 2.5V
Absolute Maximum Ratings(1)
NOTES:
1. VIL (min.) = -1.0V for pulse width less than tRC/2 or 5ns, whichever is less.
2. VIH (max.) = VDDQ + 1.0V for pulse width less than tRC/2 or 5ns, whichever is
less.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VSS (0V), and VDDQX for that port must be
supplied as indicated above.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any Input or I/O pin cannot exceed VDDQ during power
supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
Grade
Ambient
Temperature
GND
VDD
Commercial
0OC to +70OC0V
2.5V
+ 100mV
Industrial
-40OC to +85OC0V
2.5V
+ 100mV
5670 tbl 04
Symbol
Rating
Commercial
& Industrial
Unit
VTERM
(VDD)
VDD Terminal Voltage
with Respect to GND
-0.5 to 3.6
V
VTERM
(2)
(VDDQ)
VDDQ Terminal Voltage
with Respect to GND
-0.3 to VDDQ + 0.3
V
VTERM
(2)
(INPUTS and I/O's)
Input and I/O Terminal
Voltage with Respect to GND
-0.3 to VDDQ + 0.3
V
TBIAS(3)
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-65 to +150
oC
TJN
Junction Temperature
+150
oC
IOUT(For VDDQ = 3.3V) DC Output Current
50
mA
IOUT(For VDDQ = 2.5V) DC Output Current
40
mA
5670 tbl 07
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
2.4
2.5
2.6
V
VDDQ
I/O Supply Voltage(3)
2.4
2.5
2.6
V
VSS
Ground
0
V
VIH
Input High Volltage
(Address, Control &
Data I/O Inputs)
(3)
1.7
____
VDDQ + 100mV(2)
V
VIH
Input High Voltage
_
JTAG
1.7
____
VDD + 100mV(2)
V
VIH
Input High Voltage -
ZZ, OPT, M/
S
VDD - 0.2V
____
VDD + 100mV(2)
V
VIL
Input Low Voltage
-0.3
(1)
____
0.7
V
VIL
Input Low Voltage -
ZZ, OPT, M/
S
-0.3(1)
____
0.2
V
5670 tbl 05
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
Capacitance(1)
(TA = +25°C, F = 1.0MHZ) TQFP ONLY
Symbol
Parameter
Conditions
(2)
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
8
pF
COUT
(3)
Output Capacitance
VOUT = 3dV
10.5
pF
5670 tbl 08
Recommended DC Operating
Conditions with VDDQ at 3.3V
NOTES:
1. VIL (min.) = -1.0V for pulse width less than tRC/2 or 5ns, whichever is less.
2. VIH (max.) = VDDQ + 1.0V for pulse width less than tRC/2 or 5ns, whichever is
less.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VDD (2.5V), and VDDQX for that port must be
supplied as indicated above.
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
2.4
2.5
2.6
V
VDDQ
I/O Supply Voltage
(3)
3.15
3.3
3.45
V
VSS
Ground
0
V
VIH
Input High Voltage
(Address, Control
&Data I/O Inputs)(3)
2.0
____
VDDQ + 150mV
(2)
V
VIH
Input High Voltage
_
JTAG
1.7
____
VDD + 100mV(2)
V
VIH
Input High Voltage -
ZZ, OPT, M/
S
VDD - 0.2V
____
VDD + 100mV(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
VIL
Input Low Voltage -
ZZ, OPT, M/
S
-0.3(1)
____
0.2
V
5670 tbl 06
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