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參數(shù)資料
| 型號： | 28F640W30 |
| 廠商： | Intel Corp. |
| 元件分類： | DRAM |
| 英文描述： | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 中文描述： | 1.8伏英特爾無線閃存的3伏的I / O和SRAM（寬30） |
| 文件頁數(shù)： | 8/82頁 |
| 文件大?。?/td> | 749K |
| 代理商： | 28F640W30 |
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28F6408W30, 28F3204W30, 28F320W30, 28F640W30
2
Preliminary
2.0
Product Description
2.1
Product Overview
Intel
1.8 Volt Wireless Flash Memory with 3 Volt I/O and SRAM combines flash and SRAM into
one package. The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O divides the flash memory
into many separate 4-Mbit partitions. By doing this, the device can perform simultaneous read-
while-write or read-while-erase operations. With this new architecture, the 1.8 Volt Intel
Wireless
Flash Memory with 3 Volt I/O can read from one partition while programming or erasing in another
partition. This read-while-write or read-while-erase capability greatly increases data throughput
performance.
Each partition contains eight 32-Kword blocks, called
“
main blocks.
”
However, for a top or bottom
parameter device, the upper or lower 32-Kword block is segmented into eight, separate 4-Kword
blocks, called
“
parameter blocks.
”
Parameter blocks are ideally suited for frequently updated
variables or boot code storage. Both main and parameter blocks support page and burst mode
reads.
The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O also incorporates a new Enhanced
Factory Programming (EFP) mode. In EFP mode, this device provides the fastest NOR flash
factory programming time possible at 3.5 μs per data word. This feature can greatly reduce factory
flash programming time and thereby increase manufacturing efficiency.
The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O offers both hardware and software forms
of data protection. Software can individually lock and unlock any block for
“
on-the-fly
”
run-time
data protection. For absolute data protection, all blocks are locked when the V
PP
voltage falls
below the V
PP
lockout threshold.
Upon initial power up or return from reset, the 1.8 Volt Intel
Wireless Flash Memory with 3 Volt
I/O defaults to page mode. To enable burst mode, write and configure the configuration register.
While in burst mode, the 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O is synchronized
with the host CPU. Additionally, a configurable WAIT signal can be used to provide easy flash-to-
CPU synchronization.
The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O maintains compatibility with Intel
Command User Interface (CUI), Common Flash Interface (CFI), and Intel
Flash Data Integrator
(FDI) software tools. CUI is used to control the flash device, CFI is used to obtain specific product
information, and FDI is used for data management.
The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O and SRAM offers two low-power
savings features: Automatic Power Savings (APS) and standby mode. The flash device
automatically enters APS following the completion of any read cycle. Flash and SRAM standby
modes are enabled when the appropriate chip select signals are de-asserted.
Finally, the 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O provides program and erase
suspend/resume operations to allow system software to service higher priority tasks. It offers a
128-bit protection register that can be used for unique device identification and/or system security
purposes.
Combined, all these features make the 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O and
SRAM an ideal solution for any high-performance, low-power, board-constrained memory
application.
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