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參數(shù)資料
| 型號(hào)： | 28F640W30 |
| 廠商： | Intel Corp. |
| 元件分類： | DRAM |
| 英文描述： | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 中文描述： | 1.8伏英特爾無線閃存的3伏的I / O和SRAM（寬30） |
| 文件頁數(shù)： | 7/82頁 |
| 文件大?。?/td> | 749K |
| 代理商： | 28F640W30 |
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28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
1
1.0
Product Introduction
1.1
Document Purpose
This document contains information pertaining to the 1.8 Volt Intel
Wireless Flash Memory with
3 Volt I/O and SRAM. Section 1.0 provides a product introduction. Section 2.0 provides a product
description. Section 3.0 describes general device operations. Sections 4.0 through 9.0 describe the
flash functionality. Section 10 describes device power and reset considerations. Section 11.0
describes the device electrical specifications. Section 12.0 describes the flash AC characteristics.
Section 13.0 describes the SRAM AC characteristics. Section 14.0 describes ordering information.
1.2
Nomenclature
Block:
a group of flash bits that share common erase circuitry and erase simultaneously.
Partition:
Partition
is a group of blocks that share erase and program circuitry and a common
status register. If one block is erasing or one word is programming, only the status register,
rather than array data, is available when any address within the partition is read.
Main Block:
a flash block of 32-Kwords.
Parameter Block:
a flash block of 4-Kwords.
Main Partition:
a partition that only contains main blocks.
Parameter Partition:
a partition that contains both main and parameter blocks.
Top/Bottom Parameter Device:
parameter blocks are located at the top/bottom of the flash
memory map. A top/bottom parameter partition contains 15 blocks; 7 main blocks and 8
parameter blocks.
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