參數(shù)資料
型號： 28F640W30
廠商： Intel Corp.
元件分類： DRAM
英文描述： 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述： 1.8伏英特爾無線閃存的3伏的I / O和SRAM（寬30）
文件頁數(shù)： 70/82頁
文件大小： 749K
代理商： 28F640W30
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
64
Preliminary
Figure 33. Block Erase Flowchart
Start
FULL ERASE STATUS CHECK PROCEDURE
Repeat for subsequent block erasures.
Full Status register check can be done after each block erase or
after a sequence of block erasures.
Write FFh after the last operation to enter read array mode.
SR. 1 and 3 MUST be cleared before the Write State Machine
will allow further erase attempts.
Only the Clear Staus Register command clears SR.1, 3, 4, 5.
If an error is detected, clear the Status register before
attempting an erase retry or other error recovery.
No
Suspend
Erase
1
0
0
0
1
1
1
1
0
Yes
Suspend
Erase
Loop
0
Write 20h
Block Address
Write D0h and
Block Address
Read Status
Register
SR.7 =
Full Erase
Status Check
(if desired)
Block Erase
Complete
Read Status
Register
Block Erase
Successful
SR.1 =
Erase of
Locked Block
Aborted
BLOCK ERASE PROCEDURE
OpBus
Comments
Write
Block
Erase
Setup
Data = 20h
Addr = Block to be erased (BA)
Write
Erase
Confirm
Data = D0h
Addr = Block to be erased (BA)
Read
Status register data. Toggle CE# or
OE# to update Status register data
Standby
Check SR.7
1 = WSM ready
0 = WSM busy
OpBus
Comments
SR.3 =
V
PP
Range
Error
SR.4,5 =
Command
Sequence Error
SR.5 =
Block Erase
Error
Standby
Check SR.3
1 = V
PP
error
Standby
Check SR.4,5
Both 1 = Command sequence error
Standby
Check SR.5
1 = Block erase error
Standby
Check SR.1
1 = Attempted erase of locked block
Erase aborted
ERAS_BLK.WMF
Block Erase
Erase Confirm
相關(guān)PDF資料
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