參數(shù)資料
型號： 28F640W30
廠商： Intel Corp.
元件分類： DRAM
英文描述： 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述： 1.8伏英特爾無線閃存的3伏的I / O和SRAM（寬30）
文件頁數(shù)： 72/82頁
文件大?。?/td> 749K
代理商： 28F640W30
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
66
Preliminary
Figure 35. Locking Operations Flowchart
No
O
Start
Write 60h
Block Address
Write 90h
Read Block Lock
Status
Locking
Change
Lock Change
Complete
Write 01,D0,2Fh
Block Address
Write FFh
Partition Address
Yes
Write
Write
Write
(Optional)
Read
(Optional)
Standby
(Optional)
Write
Lock
Setup
Lock,
Unlock, or
Lockdown
Confirm
Read ID
Plane
Block Lock
Status
Read
Array
Data = 60h
Addr = Block to lock/unlock/lock-down (BA)
Data = 01h (Lock block)
D0h (Unlock block)
2Fh (Lockdown block)
Addr = Block to lock/unlock/lock-down (BA)
Data = 90h
Addr = Block address offset +2 (BA+2)
Block Lock status data
Addr = Block address offset +2 (BA+2)
Confirm locking change on DQ
, DQ
.
(See Block Locking State Transitions Table
for valid combinations.)
Data = FFh
Addr = Block address (BA)
OpBus
Comments
LOCKING OPERATIONS PROCEDURE
LOCK_OP.WMF
Lock Confirm
Lock Setup
Read ID Plane
Read Array
相關PDF資料
PDF描述
28F320B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F640P3 Intel StrataFlash Embedded Memory
28F320C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器)
28F800C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器)
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器)
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