參數(shù)資料
型號: 28F640W30
廠商: Intel Corp.
元件分類: DRAM
英文描述: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述: 1.8伏英特爾無線閃存的3伏的I / O和SRAM(寬30)
文件頁數(shù): 57/82頁
文件大?。?/td> 749K
代理商: 28F640W30
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
51
12.3
Flash Program and Erase Operations
NOTES:
1. Typical values measured at T
A
= +25 °C and nominal voltages.
2. Excludes external system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Sampled, not 100% tested.
5. Exact results may vary based on system overhead.
12.4
Reset Operations
NOTES:
1. These specifications are valid for all product versions (packages and speeds).
2. The device may reset if t
is <t
PLPH
Min, but this is not guaranteed.
3. Not applicable if RST# is tied to V
CC
4. Sampled, not 100% tested.
5. If RST# tied to V
CC
supply, device not ready until “P3”μs after V
CC
>=V
CC
Min.
Extended Temperatures
F-V
PP1
F-V
PP2
Unit
#
Operation
Symbol
Parameter
Notes
Typ
Max
Typ
Max
W0
Program Time
t
WHQV1
/
t
EHQV1
Word
1-Word
1,2,3,4
12
150
8
130
μs
Enhanced Factory
Programming Mode
1,3,4
N/A
N/A
3.5
16
t
BWPB
Block
4-KW Parameter
1,2,3,4
0.05
0.23
0.03
0.07
s
t
BWMB
32-KW Main
1,2,3,4
0.4
1.8
0.24
0.6
s
t
BWPB
EFP Mode
4-KW Parameter
1,2,3,4,
5
n/a
n/a
0.015
n/a
s
t
BWMB
32-KW Main
1,2,3,4,
5
n/a
n/a
0.12
n/a
s
Erase Time
t
WHQV2
/
t
EHQV2
Block
4-KW Parameter
1,2,3,4
0.3
2.5
0.25
2.5
s
32-KW Main
1,2,3,4
0.7
4
0.4
4
s
Suspend
Latency
t
WHRH1
/
t
EHRH1
Program Suspend
1,2,3,4
5
10
5
10
μs
t
WHRH2
/
t
EHRH2
Erase Suspend
1,2,3,4
9
20
9
20
EFP Latency
t
EFP-SETUP
EFP Setup
1,3,4
N/A
N/A
N/A
5
μs
t
EFP-TRAN
Program to Verify Transition
1,3,4
N/A
N/A
2.7
5.6
t
EFP-VERIFY
Verify
1,3,4
N/A
N/A
1.7
130
#
Symbol
Parameter
Note
Min
Max
Unit
P1
t
PLPH
RST# Low to Reset during Read
1, 2, 3, 4
100
ns
P2
t
PLRH
RST# Low to Reset during Block
Erase
1, 3, 4, 5
20
μs
RST# Low to Reset during Program
1, 3, 4, 5
10
P3
t
VCCPH
V
CC
Power Valid to RST# High
1, 3, 4, 5, 6
60
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