參數(shù)資料
型號(hào)： 28F400BX-TB
廠商： Intel Corp.
英文描述： 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述： 4兆位（256 × 16，為512k × 8）啟動(dòng)塊閃存系列
文件頁(yè)數(shù)： 32/49頁(yè)
文件大?。?/td> 427K
代理商： 28F400BX-TB
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
32
PRELIMINARY
Table 10. DC Characteristics
(Continued)
Sym
Parameter
Notes
V
CC
= 2.7V
–3.6V
Unit
Test Conditions
Min
Max
V
IL
Input Low Voltage
–0.4
V
CCQ
–
0.4V
0.4
V
V
IH
Input High Voltage
V
V
OL
Output Low Voltage
0.10
V
V
CC
= V
CC
Min = V
CCQ
Min
I
OL
= 100
μ
A
V
OH
Output High Voltage
V
CCQ
–
0.1V
V
V
CC
= V
CC
Min
= V
CCQ
Min
I
OH
= –100
μ
A
Complete Write Protection
V
PPLK
V
PP
Lock-Out Voltage
3
1.5
V
V
PPH1
V
during Prog/Erase
Operations
3
2.7
3.6
V
V
PPH2
3,6
11.4
12.6
V
V
LKO
V
CC
Program/Erase Lock
Voltage
V
CCQ
Program/Erase
Lock Voltage
1.5
V
V
LKO2
1.2
V
NOTES:
1.
2.
All currents are in RMS unless otherwise noted. Typical values at nominal V
CC
, T
A
= +25°C.
I
CCES
and I
CCWS
are specified with device de-selected. If device is read while in erase suspend, current draw is sum of
I
CCES
and I
CCR
. If the device is read while in program suspend, current draw is the sum of I
CCWA
and I
CCR
.
Erase and Program are inhibited when V
PP
< V
PPLK
and not guaranteed outside the valid V
PP
ranges of V
PPH1
and V
PPH2
.
Sampled, not 100% tested.
Automatic Power Savings (APS) reduces I
CCR
to approximately standby levels in static operation (CMOS inputs).
Applying V
= 11.4V–12.6V during program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter blocks. V
PP
may be connected to 12V for a total of 80 hours maximum. See Section 3.4
for details.
Includes the sum of V
CC
and V
CCQ
current.
3.
4.
5.
6.
7.
Table 11. Capacitance (T
A
= 25°C, f = 1 MHz)
Sym
Parameter
Notes
Typ
Max
Units
Conditions
C
IN
Input Capacitance
1
6
8
pF
V
IN
= 0V
C
OUT
Output Capacitance
1
10
12
pF
V
OUT
= 0V
NOTE:
1.
Sampled, not 100% tested.
相關(guān)PDF資料
PDF描述
28F410-100M1 4M-BIT (512K X 8) CMOS FLASH MEMORY
28F512 512K(64Kx8)CMOS FLASH MEMORY
28F640C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F640J3C-120 Intel StrataFlash Memory (J3)
28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F400BX-TL/BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
28F400CE-T/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Boot Block
28F400CV-T/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
28F410-100M1 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT (512K X 8) CMOS FLASH MEMORY
28F457 制造商:General Electric Company 功能描述:Capacitor - 1.75uF 200acV %
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*