參數(shù)資料
型號： 28F400BX-TB
廠商： Intel Corp.
英文描述： 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述： 4兆位（256 × 16，為512k × 8）啟動塊閃存系列
文件頁數(shù)： 29/49頁
文件大?。?/td> 427K
代理商： 28F400BX-TB
E
4.0
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
29
PRELIMINARY
ABSOLUTE MAXIMUM
RATINGS*
Extended Operating Temperature
During Read............................
–40°C to +85°C
During Block Erase
and Program............................ –40°C to +85°C
Temperature Under Bias ......... –40°C to +85°C
Storage Temperature................... –65°C to +125°C
Voltage on Any Pin
(except V
CC
, V
CCQ
and V
PP
)
with Respect to GND...............–0.5V to +5.0V
1
V
PP
Voltage (for Block
Erase and Program)
with Respect to GND.........–0.5V to +13.5V
1,2,4
V
CC
and V
CCQ
Supply Voltage
with Respect to GND...............–0.2V to +5.0V
1
Output Short Circuit Current...................... 100 mA
3
NOTICE: This datasheet contains preliminary information on
new products in production. Do not finalize a design with
this information. Revised information will be published when
the product is available. Verify with your local Intel Sales
office that you have the latest data sheet before finalizing a
design.
* WARNING: Stressing the device beyond the "Absolute
Maximum Ratings" may cause permanent damage. These
are stress ratings only. Operation beyond the "Operating
Conditions" is not recommended and extended exposure
beyond the "Operating Conditions" may effect device
reliability.
NOTES:
1.
Minimum DC voltage is
–0.5V on input/output pins.
During transitions, this level may undershoot to –2.0V
for periods < 20 ns. Maximum DC voltage on
input/output pins is V
+ 0.5V which, during
transitions, may overshoot to V
CC
+ 2.0V for periods <
20 ns.
2.
Maximum DC voltage on V
PP
may overshoot to +14.0V
for periods < 20 ns.
3.
Output shorted for no more than one second. No more
than one output shorted at a time.
4.
V
Program voltage is normally 2.7V–3.6V.
Connection to supply of 11.4V–12.6V can only be done
for 1000 cycles on the main blocks and 2500 cycles on
the parameter blocks during program/erase. V
PP
may
be connected to 12V for a total of 80 hours maximum.
See Section 3.4 for details.
5.0
OPERATING CONDITIONS (V
CCQ
= 2.7V
–3.6V)
Table 9. Temperature and Voltage Operating Conditions4
Symbol
Parameter
Notes
Min
Max
Units
T
A
Operating Temperature
–40
+85
°C
V
CC
2.7V–3.6V V
CC
Supply Voltage
1,4
2.7
3.6
Volts
V
CCQ
2.7V–3.6V I/O Supply Voltage
1,2,4
2.7
3.6
Volts
V
PP1
Program and Erase Voltage
4
2.7
3.6
Volts
V
PP2
3
11.4
12.6
Volts
Cycling
Block Erase Cycling
5
10,000
Cycles
NOTES:
1.
2.
3.
See DC Characteristics tables for voltage range-specific specifications.
The voltage swing on the inputs, V
IN
is required to match V
CCQ
.
Applying V
= 11.4V
–12.6V during a program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter blocks. V
PP
may be connected to 12V for a total of 80 hours maximum. See Section 3.4
for details.
V
CC
, V
CCQ
and V
PP1
must share the same supply when all three are between 2.7V and 3.6V.
For operating temperatures of –25
°
C– +85
°
C the device is projected to have a minimum block erase cycling of 10,000 to
30,000 cycles.
4.
5.
相關PDF資料
PDF描述
28F410-100M1 4M-BIT (512K X 8) CMOS FLASH MEMORY
28F512 512K(64Kx8)CMOS FLASH MEMORY
28F640C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器)
28F640J3C-120 Intel StrataFlash Memory (J3)
28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM)
相關代理商/技術參數(shù)
參數(shù)描述
28F400BX-TL/BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
28F400CE-T/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Boot Block
28F400CV-T/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
28F410-100M1 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT (512K X 8) CMOS FLASH MEMORY
28F457 制造商:General Electric Company 功能描述:Capacitor - 1.75uF 200acV %
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*