參數(shù)資料
型號： 28F640C3
廠商： Intel Corp.
英文描述： 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
中文描述： 3伏高級啟動塊閃存（3伏高級快速引導(dǎo)塊閃速存儲器）
文件頁數(shù)： 1/70頁
文件大?。?/td> 894K
代理商： 28F640C3
3 Volt Advanced+ Boot Block Flash
Memory
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)
Preliminary
Datasheet
Product Features
The 3
Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 μ
technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+
Boot Block Flash memory devices incorporate low voltage capability (2.7 V read, program and
erase) with high-speed, low-power operation. Flexible block locking allows any block to be
independently locked or unlocked. Add to this the Intel
Flash Data Integrator (IFDI) software
and you have a cost-effective, flexible, monolithic code plus data storage solution. Intel
3 Volt
Advanced+ Boot Block products will be available in 48-lead TSOP, 4
8-ball μBGA*, 48-ball
Very Thin Profile Fine Pitch BGA (VF BGA), and 64-ball Easy BGA packages. Additional
information on this product family can be obtained by accessing the Intel
Flash website: http://
www.intel.com/design/flash.
I
Flexible SmartVoltage Technology
—2.7 V–3.6 V Read/Program/Erase
—12 V for Fast Production Programming
I
High Performance
—2.7 V–3.6 V: 70 ns Max Access Time
I
Optimized Architecture for Code Plus Data
Storage
—Eight 4-Kword Blocks, Top or Bottom
Locations
—Up to One Hundred-Twenty-Seven 32-
Kword Blocks
—Fast Program Suspend Capability
—Fast Erase Suspend Capability
I
Flexible Block Locking
—Lock/Unlock Any Block
—Full Protection on Power-Up
—WP# Pin for Hardware Block Protection
—V
PP
= GND Option
—V
CC
Lockout Voltage
I
Low Power Consumption
—9 mA Typical Read Power
—7 μA Typical Standby Power with
Automatic Power Savings Feature
I
Extended Temperature Operation
—–40 °C to +85 °C
I
Improved 12 V Production Programming
—Faster Production Programming
—No Additional System Logic
I
128-bit Protection Register
—64-bit Unique Device Identifier
—64-bit User Programmable OTP Cells
I
Extended Cycling Capability
—Minimum 100,000 Block Erase Cycles
I
Supports Intel
Flash Data Integrator
Software
—Flash Memory Manager
—System Interrupt Manager
—Supports Parameter Storage, Streaming
Data (e.g., voice)
I
Automated Word/Byte Program and Block
Erase
—Command User Interface
—Status Registers
I
Cross-Compatible Command Support
—Intel Basic Command Set
—Common Flash Interface
I
x16 I/O for Various Applications
—48-Ball
μ
BGA* Package
—48-Ball VF BGA Package
—64-Ball Easy BGA Package
—48-Lead TSOP Package
I
0.18
μ
ETOX VII Flash Technology
Order Number: 290645-009
April 2000
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
相關(guān)PDF資料
PDF描述
28F640J3C-120 Intel StrataFlash Memory (J3)
28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM)
28M0U 60V 300mA MONOLITHIC DIODE ARRAY
28M0DC 60V 300mA MONOLITHIC DIODE ARRAY
28M0DS 60V 300mA MONOLITHIC DIODE ARRAY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F640C3BC80 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3C120 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3C-120 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3D75 制造商:Intel 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory
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