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參數資料
| 型號： | 28F400BX-TB |
| 廠商： | Intel Corp. |
| 英文描述： | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 4兆位（256 × 16，為512k × 8）啟動塊閃存系列 |
| 文件頁數： | 28/49頁 |
| 文件大?。?/td> | 427K |
| 代理商： | 28F400BX-TB |
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SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
28
PRELIMINARY
After any program or block erase operation is
complete (even after V
PP
transitions down to
V
PPLK
), the CUI must be reset to read array mode
via the Read Array command if access to the flash
memory array is desired.
Refer to AP-617 Additional Flash Data Protection
Using V
PP
, RP#, and WP#for a circuit-level
description of how to implement the protection
schemes discussed in Section 3.5.
3.7
Power Supply Decoupling
Flash memory’s power switching characteristics
require
careful
device
designers should consider three supply current
issues:
1.
Standby current levels (I
CCS
)
2.
Active current levels (I
CCR
)
3.
Transient peaks produced by falling and rising
edges of CE#.
decoupling.
System
Transient current magnitudes depend on the device
outputs’ capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
flash device should have a 0.1 μF ceramic
capacitor connected between each V
CC
and GND,
and between its V
PP
and GND. These high-
frequency, inherently low-inductance capacitors
should be placed as close as possible to the
package leads.
3.7.1
V
TRACE ON PRINTED CIRCUIT
BOARDS
Designing for in-system writes to the flash memory
requires special consideration of the V
PP
power
supply trace by the printed circuit board designer.
The V
PP
pin supplies the flash memory cells current
for programming and erasing. V
PP
trace widths and
layout should be similar to that of V
CC
. Adequate
V
PP
supply traces, and decoupling capacitors
placed adjacent to the component, will decrease
spikes and overshoots.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 28F400BX-TL/BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 28F400CE-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Boot Block |
| 28F400CV-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F410-100M1 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT (512K X 8) CMOS FLASH MEMORY |
| 28F457 | 制造商:General Electric Company 功能描述:Capacitor - 1.75uF 200acV % |
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