參數(shù)資料
型號: 16F630
廠商: Microchip Technology Inc.
英文描述: 14-Pin FLASH-Based 8-Bit CMOS Microcontrollers
中文描述: 14引腳基于閃存的8位CMOS微控制器
文件頁數(shù): 94/132頁
文件大?。?/td> 2651K
代理商: 16F630
PIC16F630/676
DS40039C-page 92
2003 Microchip Technology Inc.
12.5
DC Characteristics: PIC16F630/676-E (Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40
°
C
T
A
+125
°
C for extended
Param
No.
Device Characteristics
Min
Typ
Max
Units
Conditions
V
DD
Note
D020E
Power-down Base Current
(I
PD
)
0.00099
3.5
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
2.0
WDT, BOD, Comparators, V
REF
,
and T1OSC disabled
0.0012
4.0
3.0
0.0029
8.0
5.0
D021E
0.3
6.0
2.0
WDT Current
(1)
1.8
9.0
3.0
8.4
20
5.0
D022E
58
70
3.0
BOD Current
(1)
109
130
5.0
D023E
3.3
10
2.0
Comparator Current
(1)
6.1
13
3.0
11.5
24
5.0
D024E
58
70
2.0
CV
REF
Current
(1)
85
100
3.0
138
165
5.0
D025E
4.0
10
2.0
T1 O
SC
Current
(1)
4.6
12
3.0
6.0
20
5.0
D026E
0.0012
6.0
3.0
A/D Current
(1)
0.0022
8.5
5.0
Data in ‘Typ’ column is at 5.0V, 25
°
C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
The peripheral current is the sum of the base I
DD
or I
PD
and the additional current consumed when this
peripheral is enabled. The peripheral
current can be determined by subtracting the base I
DD
or I
PD
current from this limit. Max values should be used when calculating total current consumption.
2:
The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
.
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