參數(shù)資料
型號: (Z)PSD813F1
英文描述: Flash In System Programmable Mirocomputer Peripherals(閃速,在系統(tǒng)可編程微控制器外圍器件,1M位閃速存儲器,256K位EEPROM,16K位SRAM)
中文描述: Flash在系統(tǒng)可編程Mirocomputer外設(shè)(閃速,在系統(tǒng)可編程微控制器外圍器件,100萬位閃速存儲器,256K位的EEPROM,16K的位的SRAM)
文件頁數(shù): 115/130頁
文件大?。?/td> 650K
代理商: (Z)PSD813F1
Preliminary
PSD813F Family
111
Symbol
Parameter
1
Conditions Typical
2
Max
Unit
C
IN
C
OUT
C
VPP
Capacitance (for input pins only)
V
IN
= 0 V
V
OUT
= 0 V
V
PP
= 0 V
4
6
pF
Capacitance (for input/output pins)
8
12
pF
Capacitance (for CNTL2/V
PP
)
18
25
pF
NOTES:
1. These parameters are only sampled and are not 100% tested.
2. Typical values are for T
A
= 25
°
C and nominal supply voltages.
T
A
= 25 °C, f = 1 MHz
Pin Capacitance
Figure 48.
AC Testing
Input/Output
Waveform
Figure 49.
AC Testing
Load Circuit
Programming
3.0V
0V
TEST POINT
1.5V
DEVICE
UNDER TEST
2.01 V
195
C
L
= 30 pF
(INCLUDING
SCOPE AND JIG
CAPACITANCE)
Upon delivery from WSI, the PSD813F device has all bits in the PLDs and memories in the
1
or high state. The configuration bits are in the
0
or low state. The code, configuration,
and PLDs logic are loaded through the procedure of programming.
Information for programming the device is available directly from WSI. Please contact your
local sales representative. (See the last page.)
相關(guān)PDF資料
PDF描述
(Z)PSD813F3 Flash In System Programmable Mirocomputer Peripherals(閃速,在系統(tǒng)可編程微控制器外圍器件,1M位閃速存儲器,16K位SRAM)
(Z)PSD813F2(中文) Flash In System Programmable Mirocomputer Peripherals(閃速,在系統(tǒng)可編程微控制器外圍器件,1M位和256K位閃速存儲器,16K位SRAM)
(Z)PSD813F3R(中文) Multi-Chip-Module to Monolithic Flash PSD(閃速,在系統(tǒng)可編程微控制器外圍器件,0M位閃速存儲器,無SRAM)
(Z)PSD813F2 Flash In System Programmable Mirocomputer Peripherals(閃速,在系統(tǒng)可編程微控制器外圍器件,1M位和256K位閃速存儲器,16K位SRAM)
(Z)PSD813F3R Multi-Chip-Module to Monolithic Flash PSD(閃速,在系統(tǒng)可編程微控制器外圍器件,0M位閃速存儲器,無SRAM)
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