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參數(shù)資料
| 型號： | W972GG8JB-25 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 256M X 8 DDR DRAM, 0.4 ns, PBGA60 |
| 封裝： | 11 X 11.50 MM, ROHS COMPLIANT, WBGA-60 |
| 文件頁數(shù)： | 42/86頁 |
| 文件大小： | 1466K |
| 代理商： | W972GG8JB-25 |
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W972GG8JB
Publication Release Date: Feb. 18, 2011
- 47 -
Revision A02
Notes:
1.
All voltages are referenced to VSS.
2.
Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage
levels, but the related specifications and device operation are guaranteed for the full voltage range specified. ODT is
disabled for all measurements that are not ODT-specific.
3.
AC timing reference load:
DQ
DQS
Output
Timing
reference
point
VTT = VDDQ/2
25
Ω
VDDQ
DUT
Figure 16
– AC timing reference load
4.
This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min)
have been satisfied.
5.
If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ
can be executed.
6.
This is an optional feature. For detailed information, please refer to “operating temperature condition” section 9.2 in this data
sheet.
7.
tCKE min of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the
valid input level the entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not
transition from its valid level during the time period of tIS + 2 x tCK + tIH.
8.
A minimum of two clocks (2 *nCK) is required irrespective of operating frequency.
9.
tWTR is at least two clocks (2 * nCK) independent of operation frequency.
10. There are two sets of values listed for Command/Address input setup time: tIS(base) and tIS(ref). The tIS(ref) value (for
reference only) is equivalent to the baseline value of tIS(base) at VREF when the slew rate is 1.0 V/nS. The baseline value
tIS(base) is the JEDEC defined value, referenced from the input signal crossing at the VIH(ac) level for a rising signal and
VIL(ac) for a falling signal applied to the device under test. See Figure 17. If the Command/Address slew rate is not equal to
1.0 V/nS, then the baseline values must be derated by adding the values from table of tIS/tIH derating values for DDR2-667,
DDR2-800 and DDR2-1066 (page 55).
CLK
tIS(base)
tIH(base)
tIS(base)
tIH(base)
VDDQ
VIH(ac) min
VIH(dc) min
VREF(dc)
VIL(dc) max
VIL(ac) max
VSS
tIS(ref)
tIH(ref)
tIS(ref)
tIH(ref)
Logic levels
VREF levels
Figure 17
– Differential input waveform timing – tIS and tIH
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W972GG8JB-25I | 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 80WBGA |
| W972GG8JB-3 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin WBGA 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 3NS |
| W9751G6IB-25 | 功能描述:IC DDR2-800 SDRAM 512MB 84-WBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應商設備封裝:8-MFP 包裝:帶卷 (TR) |
| W9751G6JB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM |
| W9751G6JB-25 | 制造商:Winbond Electronics Corp 功能描述:512GB DDRII |
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