- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄231501 > W972GG8JB-25 (WINBOND ELECTRONICS CORP) 256M X 8 DDR DRAM, 0.4 ns, PBGA60 PDF資料下載
參數(shù)資料
| 型號： | W972GG8JB-25 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 256M X 8 DDR DRAM, 0.4 ns, PBGA60 |
| 封裝： | 11 X 11.50 MM, ROHS COMPLIANT, WBGA-60 |
| 文件頁數(shù)： | 35/86頁 |
| 文件大小： | 1466K |
| 代理商： | W972GG8JB-25 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁當(dāng)前第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁
W972GG8JB
Publication Release Date: Feb. 18, 2011
- 40 -
Revision A02
9.9
DC Characteristics
SYM.
CONDITIONS
18
25/25I
3
UNIT
NOTES
MAX.
IDD0
Operating Current - One Bank Active-Precharge
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD);
CKE is HIGH,
CS is HIGH between valid commands;
Address and control inputs are SWITCHING;
Databus inputs are SWITCHING.
85
72
69
mA
1,2,3,4,5,
6
IDD1
Operating Current - One Bank Active-Read-
Precharge
IOUT = 0 mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD),
tRCD = tRCD(IDD);
CKE is HIGH,
CS is HIGH between valid commands;
Address and control inputs are SWITCHING;
Data bus inputs are SWITCHING.
85
80
75
mA
1,2,3,4,5,
6
IDD2P
Precharge Power-Down Current
All banks idle;
tCK = tCK(IDD);
CKE is LOW;
Other control and address inputs are STABLE;
Data Bus inputs are FLOATING. (TCASE
≤ 85°C)
12
mA
1,2,3,4,5,
6,7
IDD2N
Precharge Standby Current
All banks idle;
tCK = tCK(IDD);
CKE is HIGH,
CS is HIGH;
Other control and address inputs are SWITCHING;
Data bus inputs are SWITCHING.
55
50
46
mA
1,2,3,4,5,
6
IDD2Q
Precharge Quiet Standby Current
All banks idle;
tCK = tCK(IDD);
CKE is HIGH,
CS is HIGH;
Other control and address inputs are STABLE;
Data bus inputs are FLOATING.
50
45
42
mA
1,2,3,4,5,
6
IDD3PF
Active Power-Down Current
All banks open;
tCK = tCK(IDD);
CKE is LOW;
Other control and address inputs are
STABLE;
Data bus inputs are FLOATING.
(TCASE
≤ 85°C)
Fast PDN Exit
MRS(12) = 0
16
mA
1,2,3,4,5,
6
IDD3PS
Slow PDN Exit
MRS(12) = 1
16
mA
1,2,3,4,5,
6,7
IDD3N
Active Standby Current
All banks open;
tCK = tCK(IDD); tRAS = tRASmax(IDD), tRP = tRP(IDD);
CKE is HIGH,
CS is HIGH between valid commands;
Other control and address inputs are SWITCHING;
Data bus inputs are SWITCHING.
60
55
50
mA
1,2,3,4,5,
6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WF512K32-150CJC | 512K X 32 FLASH 5V PROM MODULE, 150 ns, CQCC68 |
| W73B586A-09L | 32K X 18 CACHE SRAM, 9 ns, PQCC52 |
| WS512K32-100G4TM | 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, CQFP68 |
| WS512K32-35G4M | 2M X 8 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
| WS512K32-35G4Q | 2M X 8 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W972GG8JB-25I | 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 80WBGA |
| W972GG8JB-3 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin WBGA 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 3NS |
| W9751G6IB-25 | 功能描述:IC DDR2-800 SDRAM 512MB 84-WBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W9751G6JB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM |
| W9751G6JB-25 | 制造商:Winbond Electronics Corp 功能描述:512GB DDRII |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。