- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361779 > W3E32M64S-250SBM 32Mx64 DDR SDRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | W3E32M64S-250SBM |
| 英文描述： | 32Mx64 DDR SDRAM |
| 中文描述： | 32Mx64 DDR內(nèi)存 |
| 文件頁數(shù)： | 15/17頁 |
| 文件大?。?/td> | 735K |
| 代理商： | W3E32M64S-250SBM |
15
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W3E32M64S -X S BX
July 2006
Rev. 5
That is, from the time the AUTO REFRESH command is registered, CKE must be
active at each rising clock edge, until t
RFC
has been satis
fi
ed.
50. ICC2N speci
fi
es the DQ, DQS, and DM to be driven to a valid high or low logic
level. ICC2Q is similar to ICC2F except ICC2Q speci
fi
es the address and control
inputs to remain stable. Although ICC2F, ICC2N, and ICC2Q are similar, ICC2F is
“worst case.”
51. Whenever the operating frequency is altered, not including jitter, the DLL is required
to be reset. This is followed by 200 clock cycles before any READ command.
52. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20
MHz. Any noise above 20 MHz at the DRAM generated from any source other than
that of the DRAM itself may not exceed the DC coltage range of 2.6V ± 100mV.
53. For 333Mbs operation of commercial and Industrial temperature CL = 2.5, at
Military temperature CL = 3.
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Bottom View
PACKAGE DIMENSION: 208 PLASTIC BALL GRID ARRAY (PBGA)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
11
10
9
8
7
6
5
4
3
2
1
208 x 0.6 (0.024) NOM
1.0 (0.039)NOM
10.0 (0.394) NOM
13.10 (0.516) MAX
2
1
1
2.56 (0.101) MAX
0.5 (0.020) NOM
Note:
This package utilizes solder balls which contain lead: Sn63Pb37
If you require lead free solder ball packages, please contact WEDC for information.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3E32M64S-266SBC | 32Mx64 DDR SDRAM |
| W3E32M64S-XSBX | DDR SDRAM STACKED MCP |
| W3E64M72S-266ESI | 64Mx72 DDR SDRAM |
| W3E64M72S-266ESM | 64Mx72 DDR SDRAM |
| W3E64M72S-333BC | 64Mx72 DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3E32M64S-266BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64S-266BI | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E32M64S-266BM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-266SBC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64S-266SBI | 制造商:White Electronic Designs 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 208 PBGA, INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。