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參數(shù)資料
| 型號： | W3E32M64S-250SBM |
| 英文描述： | 32Mx64 DDR SDRAM |
| 中文描述： | 32Mx64 DDR內(nèi)存 |
| 文件頁數(shù)： | 11/17頁 |
| 文件大小： | 735K |
| 代理商： | W3E32M64S-250SBM |
11
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W3E32M64S -X S BX
July 2006
Rev. 5
I
CC
SPECIFICATIONS AND CONDITIONS
(NOTES 1-5, 10, 12, 14, 46)
V
CC
, V
CCQ
= +2.5V ± 0.2V; -55°C
≤
T
A
≤
+125°C
Parameter/Condition
Symbol
M
AX
333Mbs266Mbs200Mbs Units
OPERATING CURRENT: One bank; Active-Precharge; t
RC
= t
RC
(MIN); t
CK
= t
CK
(MIN); DQ, DM, and DQS inputs
changing once per clock cyle; Address and control inputs changing once every two clock cycles; (22, 47)
OPERATING CURRENT: One bank; Active-Read-Precharge; Burst = 4; t
RC
= t
RC
(MIN); t
CK
= t
CK
(MIN); I
OUT
=
0mA; Address and control inputs changing once per clock cycle (22, 47)
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; Power-down mode; t
CK
= t
CK
(MIN); CKE
= LOW; (23, 32, 49)
IDLE STANDBY CURRENT: CS = HIGH; All banks idle; t
CK
= t
CK
(MIN); CKE = HIGH; Address and other control
inputs changing once per clock cycle. V
IN
= V
REF
for DQ, DQS, and DM (50)
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; t
CK
= t
CK
(MIN); CKE =
LOW (23, 32, 49)
ACTIVE STANDBY CURRENT: CS = HIGH; CKE = HIGH; One bank; Active-Precharge; t
RC
= t
RAS
(MAX); t
CK
=
t
CK
(MIN); DQ, DM, and DQS inputs changing twice per clock cycle; Address and other control inputs changing
once per clock cycle (22)
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank active; Address and control inputs
changing once per clock cycle; t
CK
= t
CK
(MIN); I
OUT
= 0mA (22, 47)
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active; Address and control inputs
changing once per clock cycle; t
CK
= t
CK
(MIN); DQ, DM, and DQS inputs changing twice per clock cycle (22)
I
CC0
520
520
460
mA
I
CC1
640
640
580
mA
I
CC2P
20
20
20
mA
I
CC2F
180
180
160
mA
I
CC3P
140
140
120
mA
I
CC3N
200
200
180
mA
I
CC4R
660
660
580
mA
I
CC4W
780
640
540
mA
AUTO REFRESH CURRENT
t
REFC
= t
RFC
(MIN) (49)
t
REFC
= 7.8125μs (27, 49)
Standard (11)
I
CC5
I
CC5A
I
CC6
1,160
1,160
1,120
mA
mA
mA
40
40
40
SELF REFRESH CURRENT: CKE 0.2V
OPERATING CURRENT: Four bank interleaving READs (BL=4) with auto precharge, t
RC
=t
RC
(MIN); t
CK
= t
CK
(MIN);
Address and control inputs change only during Active READ or WRITE commands. (22, 48)
20
20
20
I
CC7
1,620
1,600
1,400
mA
AC INPUT OPERATING CONDITIONS
V
CC
, V
CCQ
= +2.5V ± 0.2V; -55°C
≤
T
A
≤
125°C
Parameter/Condition
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Symbol
V
IH
V
IL
Mn
Max
-
Units
V
V
V
REF
+ 0.5
-
V
REF
- 0.5
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相關(guān)代理商/技術(shù)參數(shù) |
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| W3E32M64S-266BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64S-266BI | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E32M64S-266BM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-266SBC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64S-266SBI | 制造商:White Electronic Designs 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 208 PBGA, INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
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