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參數(shù)資料
| 型號： | W3E32M64S-250SBM |
| 英文描述： | 32Mx64 DDR SDRAM |
| 中文描述： | 32Mx64 DDR內(nèi)存 |
| 文件頁數(shù)： | 10/17頁 |
| 文件大小： | 735K |
| 代理商： | W3E32M64S-250SBM |
10
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W3E32M64S -X S BX
July 2006
Rev. 5
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on V
CC
, V
CCQ
Supply relative to Vss
-1 to 3.6
V
Voltage on I/O pins relative to Vss
-1 to 3.6
V
Operating Temperature T
A
(Mil)
-55 to +125
°C
Operating Temperature T
A
(Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +125
°C
NOTE: Stress greater than those listed under "Absolute Maximum Ratings" may cause per ma nent damage to the device. This is a stress rating only and func ion al op er a ion of
the device at these or any other conditions greater than those in di cat ed in the operational sections of this speci
fi
cation is not implied. Exposure to ab so ute maximum rating
con di ions for extended periods may affect reliability.
CAPACITANCE (NOTE 13)
Parameter
Symbol
Max
Unit
Input Capacitance: CK/CK#
C
I1
6
pF
Addresses, BA
0-1
Input Capacitance
CA
20
pF
Input Capacitance: All other input-only pins
C
I2
6
pF
Input/Output Capacitance: I/Os
C
IO
9
pF
BGA THERMAL RESISTANCE
Description
Junction to Ambient (No Air
fl
ow)
Junction to Ball
Junction to Case (Top)
Symbol
Theta JA
Theta JB
Theta JC
Typical
15.7
13.8
2.8
Units
°C/W
°C/W
°C/W
Notes
1
1
1
Refer to "PBGA Thermal Resistance Correlation" (Application Note) at www.wedc.com in the application notes section for modeling conditions.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(NOTES 1-5, 16, 52)
V
CC
, V
CCQ
= +2.5V ± 0.2V; -55°C
≤
T
A
≤
+125°C
Parameter/Condition
Supply Voltage (36, 41)
I/O Supply Voltage (36, 41, 44, 52)
Input Leakage Current: Any input 0V
≤
V
IN
≤
V
CC
(All other pins not under test = 0V)
Input Leakage Address Current (All other pins not under test = 0V)
Output Leakage Current: I/Os are disabled; 0V
≤
V
OUT
≤
V
CCQ
Output Levels: Full drive option (37, 39)
High Current (V
OU
T = V
CCQ
- 0.373V, minimum V
REF
, minimum V
TT
)
Low Current (V
OUT
= 0.373V, maximum V
RE
F, maximum V
TT
)
Output Levels: Reduced drive option (38, 39)
High Current (V
OUT
= V
CCQ
- 0.763V, minimum V
REF
, minimum V
TT
)
Low Current (V
OUT
= 0.763V, maximum V
REF
, maximum V
TT
)
I/O Reference Voltage (6,44)
I/O Termination Voltage (7, 44)
Symbol
V
CC
V
CCQ
II
II
I
OZ
Mn
2.3
2.3
-2
-8
-5
Max
2.7
2.7
2
8
5
Units
V
V
μA
μA
μA
I
OH
-12
-
mA
I
OL
12
-
mA
I
OHR
-9
-
mA
I
OLR
9
-
mA
V
REF
V
TT
0.49 x V
CCQ
V
REF
- 0.04
0.51 x V
CCQ
V
REF
+ 0.04
V
V
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| W3E32M64S-266BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
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| W3E32M64S-266SBI | 制造商:White Electronic Designs 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 208 PBGA, INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
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