參數(shù)資料
型號: VG36128161BT-7H
廠商: VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁數(shù): 66/69頁
文件大?。?/td> 1335K
代理商: VG36128161BT-7H
Document :1G5-0183
Rev.5
Page 69
VIS
VG36128401B / VG36128801B / VG36128161B
CMOS Synchronous Dynamic RAM
Packaging Information
400mil, 54-Pin Plastic TSOP
54 Balls VFBGA
1. CONTROLLING DIMENSION : MILLIMETERS
2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.
MOLD PROTRUSION SHALL NOT EXCEED 0.15mm(0.006") PER SIDE.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25mm(0.01") PER SIDE.
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO
DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER
THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm.
NOTE:
22.09
11.56
10.03
R1
ZD
E1
L
R
E
e
c
D
c1
b1
b
A
A1
A2
DIM
---
0.12
0.005
0.012
0.005
0.870
0.455
0.016
0.005
0.395
0.71 REF.
0.80 BASIC
10.16
0.40
0.12
0.50
---
11.76
10.29
0.25
0.60
11.96
---
0.12
22.22
---
0.30
---
0.21
22.35
0.16
0.45
0.40
0.028 REF.
0.400
0.020
---
0.463
0.0315 BASIC
0.405
0.024
0.010
0.471
---
0.875
---
0.008
0.880
0.006
0.016
0.018
MIN.
0.002
0.037
MILLIMETERS
---
0.05
0.95
---
1.00
MIN.
NOM.
1.20
0.15
1.05
MAX.
---
0.039
---
INCHES
NOM.
0.047
0.006
0.041
MAX.
A
b
0.100(0.004")
e
E
SEATING PLANE
28
27
D
ZD
1
54
c
B
RAD R
A2
A1
E1
DETAIL A
B
L
0°~8°
RAD R1
c1
c
BASE METAL
WITH PLATING
SECTION B-B
b1
b
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VG36128161BFL-7L 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
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