參數(shù)資料
型號: VG36128161BT-7H
廠商: VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁數(shù): 2/69頁
文件大小: 1335K
代理商: VG36128161BT-7H
Document :1G5-0183
Rev.5
Page 10
VIS
VG36128401B / VG36128801B / VG36128161B
CMOS Synchronous Dynamic RAM
2. Truth Table
2.1 Command Truth Table
2.2 DQM Truth Table
2.3 CKE Truth Table
H : High level, L : Low level
X : High or Low level (Don
’t care), V : Valid Data input
FUNCTION
Symbol
CKE
CS
RAS
CAS
WE
BA
A10
A11
A9 - A0
n - 1
n
Device deselect
DESL
H
X
H
X
No operation
NOP
H
X
L
H
X
Mode register set
MRS
H
X
L
V
Bank activate
ACT
H
X
L
H
V
Read
READ
H
X
L
H
L
H
V
L
V
Read with auto precharge
READA
H
X
L
H
L
H
V
H
V
Write
WRIT
H
X
L
H
L
V
L
V
Write with auto precharge
WRITA
H
X
L
H
L
V
H
V
Precharge select bank
PRE
H
X
L
H
L
V
L
X
Precharge all banks
PALL
H
X
L
H
L
X
H
X
Burst stop
BST
H
X
L
H
L
X
CBR (Auto) refresh
REF
H
L
H
X
Self refresh
SELF
H
L
H
X
FUNCTION
Symbol
CKE
DQM
n - 1
Data write/output enable
ENB
H
X
L
Data mask/output disable
MASK
H
X
H
Current State
Function
Symbol
CKE
CS
RAS
CAS
WE
Add -
ress
n - 1
n
Activating
Clock suspend mode entry
H
L
X
Any
Clock suspend
L
X
Clock suspend
Clock suspend mode exit
L
H
X
Idle
CBR refresh command
REF
H
L
H
X
Idle
Self refresh entry
SELF
H
L
H
X
Self refresh
Self refresh exit
L
H
L
H
X
L
H
X
Idle
Power down entry
H
L
X
Power down
Power down exit
L
H
X
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VG36128161BFL-7L 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
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