- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄202451 > VG36128161BT-7H (VANGUARD INTERNATIONAL SEMICONDUCTOR CORP) 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 PDF資料下載
參數(shù)資料
| 型號(hào)： | VG36128161BT-7H |
| 廠商： | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-54 |
| 文件頁(yè)數(shù)： | 4/69頁(yè) |
| 文件大?。?/td> | 1335K |
| 代理商： | VG36128161BT-7H |
第1頁(yè)第2頁(yè)第3頁(yè)當(dāng)前第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)
Document :1G5-0183
Rev.5
Page 12
VIS
VG36128401B / VG36128801B / VG36128161B
CMOS Synchronous Dynamic RAM
(2/3)
Current state
CS RAS CA
WE
Address
Command
Action
Notes
Read with auto
precharge
H
X
DESL
Continue burst to end
Precharging
L
H
X
NOP
Continue burst to end
Precharging
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
11
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
11
L
H
BA, RA
ACT
ILLEGAL
3,11
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3,11
L
H
X
PEF/SELF
ILLEGAL
L
Op - Code
MRS
ILLEGAL
Write with auto
precharge
H
X
DESL
Continue burst to end
write
recovering with auto precharte
L
H
X
NOP
Continue burst to end
write
recovering with auto precharge
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
11
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
11
L
H
BA, RA
ACT
ILLEGAL
3,11
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3,11
L
H
X
REF/SELF
ILLEGAL
L
Op - code
MRS
ILLEGAL
Precharging
H
X
DESL
Nop
Enter idle after tRP
L
H
X
NOP
Nop
Enter idle after tRP
L
H
L
X
BST
Nop
Enter idle after tRP
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PALL
Nop
Enter idle after tRP
L
H
X
REF/SELF
ILLEGAL
L
Op - Code
MRS
ILLEGAL
Row activating
H
X
DESL
Nop
Enter row active after tRCD
L
H
X
NOP
Nop
Enter row active after tRCD
L
H
L
X
BST
Nop
Enter row active after tRCD
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BA, RA
ACT
ILLEGAL
3, 9
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
H
X
REF/SELF
ILLEGAL
L
Op - Code
MRS
ILLEGAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VG36128161BFL-7L | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| VG95234E32-5P1X | 2 CONTACT(S), ALUMINUM ALLOY, MALE, MIL SERIES CONNECTOR, CLAMP AND CRIMP, PLUG |
| VG95234E32-5P1Y | 2 CONTACT(S), ALUMINUM ALLOY, MALE, MIL SERIES CONNECTOR, CLAMP AND CRIMP, PLUG |
| VG95234E32-5P1Z | 2 CONTACT(S), ALUMINUM ALLOY, MALE, MIL SERIES CONNECTOR, CLAMP AND CRIMP, PLUG |
| VG95234E32-5PN | 2 CONTACT(S), ALUMINUM ALLOY, MALE, MIL SERIES CONNECTOR, CLAMP AND CRIMP, PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VG36128401A | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36128401BT | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36128801A | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36128801BT | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG3617161BT-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。