參數(shù)資料
型號: VG36128161BFL-7L
廠商: VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
封裝: 10 X 9 MM, VFBGA-54
文件頁數(shù): 1/69頁
文件大?。?/td> 1335K
代理商: VG36128161BFL-7L
Document :1G5-0183
Rev.5
Page 1
VIS
VG36128401B / VG36128801B / VG36128161B
CMOS Synchronous Dynamic RAM
Description
The VG36128401B, VG36128801B and VG36128161B are high-speed 134,217,728-bit synchronous
dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4 and 2,097,152 x 16 x
4 (word x bit x bank), respectively.
The synchronous DRAMs achieve high-speed data transfer using the pipeline architecture. All inputs
and outputs are synchronized with the positive edge of the clock.The synchronous DRAMs are compatible
with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOPII or 54-ball VFBGA (x16 only).
Features
Single 3.3V (
) power supply
High speed clock cycle time -6: 166MHz<3-3-3>, -7H: 133MHz<2-2-2>,
-7L:133MHz<3-3-3>, -8H: 100MHz<2-2-2>
Fully synchronous operation referenced to clock rising edge
Possible to assert random column access in every cycle
Quad internal banks controlled by BA0 & BA1 (Bank Select)
Byte control by LDQM and UDQM for VG36128161B
Programmable Wrap sequence (Sequential / Interleave)
Programmable burst length (1, 2, 4, 8 and full page)
Programmable /CAS latency (2 and 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
X4, X8, X16 organization
LVTTL compatible inputs and outputs
4,096 refresh cycles / 64ms
.
0.3V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VG36128161BT 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM
VG36128401A 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM
VG36128401BT 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM
VG36128801A 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM
VG36128801BT 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM