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參數(shù)資料
| 型號： | VG36128161BFL-7L |
| 廠商： | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封裝： | 10 X 9 MM, VFBGA-54 |
| 文件頁數(shù)： | 3/69頁 |
| 文件大?。?/td> | 1335K |
| 代理商： | VG36128161BFL-7L |
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Document :1G5-0183
Rev.5
Page 11
VIS
VG36128401B / VG36128801B / VG36128161B
CMOS Synchronous Dynamic RAM
2.4 Operative Command Table (note 1)
HCurrent state CS
RAS CAS WE
Address
Command
Action
Notes
Idle
H
X
DESL
Nop or Power down
2
L
H
X
NOP or BST
Nop or Power down
2
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BR, RA
ACT
Row active
L
H
L
BA, A10
PRE/PALL
Nop
L
H
X
REF/SELF
Refresh or Self refresh
4
L
Op-Code
MPS
Mode register access
Row active
H
X
DESL
Nop
L
H
X
NOP or BST
Nop
L
H
L
H
BA, CA, A10
READ/READA
Begin read : Determine AP
5
L
H
L
BA, CA, A10
WRIT/WRITA
Begin write : Determine AP
5
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PALL
Precharge
6
L
H
X
REF/SELF
ILLEGAL
L
Op-Code
MRS
ILLEGAL
Read
H
X
DESL
Continue burst to end
Row active
L
H
X
NOP
Continue burst to end
Row active
L
H
L
X
BST
Burst stop
Row active
L
H
L
H
BA, CA, A10
READ/READA
Term burst, new read : Determine AP
7
L
H
L
BA, CA, A10
WRIT/WRITA
Term burst, start write : Determine AP
7,8
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PALL
Term burst, precharging
L
H
X
REF/SELF
ILLEGAL
L
Op-Code
MRS
ILLEGAL
Write
H
X
DESL
Continue burst to end
write recovering
L
H
X
NOP
Continue burst to end
write recovering
L
H
L
X
BST
Burst stop
Row active
L
H
L
H
BA, CA, A10
READ/READA
Term burst, start read : Determine AP
7,8
L
H
L
BA, CA, A10
WRIT/WRITA
Term burst, new write : Determine AP
7
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PALL
Term burst, precharging
9
L
H
X
REF/SELF
ILLEGAL
L
Op-Code
MRS
ILLEGAL
(1/3)
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相關(guān)代理商/技術(shù)參數(shù) |
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| VG36128161BT | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
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| VG36128401BT | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36128801A | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36128801BT | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
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