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參數(shù)資料
| 型號(hào)： | VG36128161BFL-7L |
| 廠商： | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封裝： | 10 X 9 MM, VFBGA-54 |
| 文件頁數(shù)： | 19/69頁 |
| 文件大?。?/td> | 1335K |
| 代理商： | VG36128161BFL-7L |
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Document :1G5-0183
Rev.5
Page 26
VIS
VG36128401B / VG36128801B / VG36128161B
CMOS Synchronous Dynamic RAM
10.2.2 Precharge Termination in WRITE Cycle
During WRITE cycle, the burst write operation is terminated by a precharge command.
When the precharge command is issued, the burst write operation is terminated and precharge starts.
The same bank can be activated again after tRP from the precharge command. The DQM must be high to mask
invalid data in.
During WRITE cycle, the write data written prior to the precharge command will be correctly stored. However,
invalid data may be written at the same clock as the precharge command. To prevent this from happening, DQM
must be high at the same clock as the precharge command. This will mask the invalid data.
PRECHARGE TERMINATION in WRITE Cycle
Burst lengh = X
CLK
Command
CAS latency = 2
DQM
Hi - Z
Write
T0
T1
T2
T3
T4
T5
T6
T7
T8
tRP
PRE
ACT
DQ
Write
PRE
ACT
tRP
CAS latency = 3
Hi - Z
D0
D3
D2
D1
D0
D3
D2
D1
DQM
D4
command
DQ
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| VG95234E32-5P1X | 2 CONTACT(S), ALUMINUM ALLOY, MALE, MIL SERIES CONNECTOR, CLAMP AND CRIMP, PLUG |
| VG95234E32-5P1Y | 2 CONTACT(S), ALUMINUM ALLOY, MALE, MIL SERIES CONNECTOR, CLAMP AND CRIMP, PLUG |
| VG95234E32-5P1Z | 2 CONTACT(S), ALUMINUM ALLOY, MALE, MIL SERIES CONNECTOR, CLAMP AND CRIMP, PLUG |
| VG95234E32-5PN | 2 CONTACT(S), ALUMINUM ALLOY, MALE, MIL SERIES CONNECTOR, CLAMP AND CRIMP, PLUG |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VG36128161BT | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36128401A | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36128401BT | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36128801A | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36128801BT | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
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