參數(shù)資料
型號(hào)： V58C2128804-75L
廠商： MOSEL-VITELIC
元件分類(lèi)： DRAM
英文描述： 16M X 8 DDR DRAM, 0.75 ns, PDSO66
封裝： PLASTIC, TSOP2-66
文件頁(yè)數(shù)： 37/58頁(yè)
文件大?。?/td> 722K
代理商： V58C2128804-75L
42
V58C2128(804/404/164)SAT Rev. 1.1 February 2001
MOSEL VITELIC
V58C2128(804/404/164)SAT
IBIS: I/V Characteristics for Input and Output Buffers
Normal strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figure b.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages from
0 to VDDQ/2
Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Minimum
Typical Low
Typical High
Maximum
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
Io
ut
(m
A)
Vout(V)
Maximum
Typical High
Minumum
Iout(
m
A)
-220
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0.0
0.5
1.0
1.5
2.0
2.5
Typical Low
VDDQ — Vout(V)
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