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參數(shù)資料
| 型號： | V58C2128804-75L |
| 廠商： | MOSEL-VITELIC |
| 元件分類： | DRAM |
| 英文描述： | 16M X 8 DDR DRAM, 0.75 ns, PDSO66 |
| 封裝： | PLASTIC, TSOP2-66 |
| 文件頁數(shù)： | 3/58頁 |
| 文件大小： | 722K |
| 代理商： | V58C2128804-75L |
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11
MOSEL VITELIC
V58C2128(804/404/164)SAT
V58C2128(804/404/164)SAT Rev. 1.1 February 2001
Output Data and Data Strobe Valid Window for DDR Read Cycles
Read Preamble and Postamble Operation
Prior to a burst of read data and given that the controller is not currently in burst read mode, the data strobe
signal (DQS), must transition from Hi-Z to a valid logic low. The is referred to as the data strobe “read pream-
ble” (tRPRE). This transition from Hi-Z to logic low nominally happens one clock cycle prior to the first edge of
valid data.
Once the burst of read data is concluded and given that no subsequent burst read operations are initiated,
the data strobe signal (DQS) transitions from a logic low level back to Hi-Z. This is referred to as the data
strobe “read postamble” (tRPST). This transition happens nominally one-half clock period after the last edge of
valid data.
Consecutive or “gapless” burst read operations are possible from the same DDR SDRAM device with no
requirement for a data strobe “read” preamble or postamble in between the groups of burst data. The data
strobe read preamble is required before the DDR device drives the first output data off chip. Similarly, the
data strobe postamble is initiated when the device stops driving DQ data at the termination of read burst cycles.
D0
D1
(CAS Latency = 2; Burst Length = 2)
T0
T1
T2
T3
T4
READ
NOP
Command
DQS
DQ
tDV(min)
CK, CK
tDQSV(min)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| V58C2256324SAB30 | 制造商:Marvell 功能描述:Marvell V58C2256324SAB30 |
| V58C2256324SAB33 | 制造商:Marvell 功能描述:Marvell V58C2256324SAB33 |
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