參數(shù)資料
型號(hào): UJA1065
廠商: NXP Semiconductors N.V.
英文描述: High-speed CAN/LIN fail-safe system basis chip
中文描述: 高速的CAN / LIN故障防護(hù)系統(tǒng)基礎(chǔ)芯片
文件頁數(shù): 45/67頁
文件大小: 285K
代理商: UJA1065
9397 750 14409
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Objective data sheet
Rev. 01 — 10 August 2005
45 of 67
Philips Semiconductors
UJA1065
High-speed CAN/LIN fail-safe system basis chip
7.
Limiting values
[1]
In accordance with IEC 60747-1. An alternative definition of virtual junction temperature T
vj
is: T
vj
= T
amb
+ P
d
×
R
th(vj-amb)
, where
R
th(vj-amb)
is a fixed value to be used for the calculation of T
vj
. The rating for T
vj
limits the allowable combinations of power dissipation
(P
d
) and ambient temperature (T
amb
).
Human Body Model (HBM): C = 100 pF; R = 1.5 k
.
Machine Model (MM): C = 200 pF; L = 0.75
μ
H; R = 10
.
[2]
[3]
Table 25:
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced to GND.
Symbol
Parameter
V
BAT42
BAT42 supply voltage
Limiting values
Conditions
Min
0.3
-
0.3
-
Max
+60
+60
+33
+48
Unit
V
V
V
V
load dump; t
500 ms
V
BAT14
BAT14 supply voltage
load dump; t
500 ms
V
DC(n)
DC voltages on pins
TXDC, RXDC, TXDL, RXDL, RSTN,
INTN, SDO, SDI, SCK, SCS and EN
INH/LIMP, V3, SYSINH and WAKE
CANH, CANL, SPLIT and LIN
transient voltage at pins CANH, CANL
and LIN
DC voltage at pin RTLIN
DC voltage at pins V1 and V2
DC voltage at pin SENSE
DC voltage at pin TEST
storage temperature
ambient temperature
virtual junction temperature
electrostatic discharge voltage
0.3
V
V1
+ 0.3
V
1.5
60
150
V
BAT42
+ 0.3
+60
+100
V
V
V
V
trt
in accordance with
ISO 7637
V
RTLIN
V
V1
, V
V2
V
SENSE
V
TEST
T
stg
T
amb
T
vj
V
esd
60
0.3
0.3
0.3
55
40
V
BAT42
+ 1.2
+5.5
V
BAT42
+ 1.2
+15
+150
+125
+150
V
V
V
V
°
C
°
C
°
C
[1]
40
[2]
HBM
at pins CANH, CANL,
SPLIT, LIN, RTLIN,
WAKE, BAT42, V3,
SENSE; with respect to
GND
at any other pin
MM; at any pin
8.0
+8.0
kV
2.0
+2.0
+200
kV
V
[3]
200
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